IPI26CN10N G-VB Product details
Product introduction:
IPI26CN10N G-VB is a high-performance single N-channel MOSFET in TO262 package with excellent conduction performance and current handling capability. Its main features include 100V drain-source voltage (VDS) and up to 100A drain current carrying capacity, which can provide excellent performance in high-power applications. This MOSFET uses Trench technology with an on-resistance as low as 9mΩ @ VGS=10V, ensuring low conduction loss and high efficiency, making it an ideal choice for various power management and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
- **Package type**: TO262
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Thermal performance**: Excellent heat dissipation performance, suitable for large current processing
Domain and module applications:
1. **Power tools and motor control**
The IPI26CN10N G-VB is suitable for a variety of power tools and motor control applications. Its high current carrying capacity and low on-resistance enable it to effectively drive high-power motors, and provide excellent efficiency and low losses, ensuring long-term stable operation of the system.
2. **Power management and DC-DC converters**
This MOSFET is ideal for power management systems such as DC-DC converters. Due to its low on-resistance, it is able to reduce losses during the conversion process, thereby improving the efficiency of the entire system. Suitable for servers, communication equipment and industrial power systems.
3. **Electric vehicles and battery management systems**
In electric vehicles and battery management systems, the IPI26CN10N G-VB can handle high current charging and discharging requirements. Its low conduction losses and high switching speed make it excellent in chargers and inverters, improving the overall efficiency of battery management systems.
4. **Industrial Automation Equipment**
This MOSFET can also be used in industrial automation equipment, such as PLC controllers and robotic applications. Its high withstand voltage and high current handling capabilities make it suitable for operation in environments that require fast response and efficient control.
5. **LED Drive and Lighting Control**
The IPI26CN10N G-VB also performs well in LED drive applications. The low on-resistance helps provide a stable current output, which is particularly suitable for high-power LED lighting systems, ensuring high brightness, low heat generation, and high-efficiency lighting effects.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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