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IPI180N10N3 G-VB Product details
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1. IPI180N10N3 G-VB Product Introduction
IPI180N10N3 G-VB is a high-performance N-channel power MOSFET in TO262 package, designed for applications requiring efficient switching and high current handling capabilities. The device supports drain-source voltage (VDS) up to 100V and drain current (ID) of 100A, and uses Trench technology to achieve extremely low on-resistance. At a gate drive voltage of 10V, the on-resistance is as low as 9mΩ, ensuring low-loss switching performance. This MOSFET is particularly suitable for power management, DC-DC converters, automotive electronics, and motor control.
IPI180N10N3 G-VB is a high-performance N-channel power MOSFET in TO262 package, designed for applications requiring efficient switching and high current handling capabilities. The device supports drain-source voltage (VDS) up to 100V and drain current (ID) of 100A, and uses Trench technology to achieve extremely low on-resistance. At a gate drive voltage of 10V, the on-resistance is as low as 9mΩ, ensuring low-loss switching performance. This MOSFET is particularly suitable for power management, DC-DC converters, automotive electronics, and motor control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. IPI180N10N3 G-VB Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology
- **Power consumption**: Depends on the heat dissipation conditions in the application
- **Switching speed**: Fast switching performance, suitable for high frequency applications
- **Package type**: TO262
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench technology
- **Power consumption**: Depends on the heat dissipation conditions in the application
- **Switching speed**: Fast switching performance, suitable for high frequency applications
Domain and module applications：
III. Application fields and module examples
1. **DC-DC converter**
The IPI180N10N3 G-VB is suitable for high-efficiency DC-DC converters, especially in scenarios requiring high current and low loss, such as servers, communication equipment, and industrial power supplies. Its low on-resistance and high current capability enable it to minimize energy loss and improve efficiency during high power conversion.
2. **Automotive electronic systems**
In automotive power management modules and control systems, the device can be used as a power switch or for motor drive systems in electric vehicles. The high current capability and high voltage resistance of the IPI180N10N3 G-VB make it excellent in battery management systems (BMS) and efficient motor control units (MCUs).
3. **Motor drive applications**
This MOSFET plays an indispensable role in motor drive systems, especially in situations where high current switching is required. It can be used for motor control in industrial equipment, driver circuits in home appliances, and motor drive systems in power tools.
4. **Power Management and Load Control Module**
In high-power power management, this MOSFET can be used as a load switch device, suitable for intelligent power modules and industrial automation systems. Its low on-resistance ensures low power consumption and high efficiency of equipment operation, and provides stable performance in load control and protection circuits.
The characteristics of IPI180N10N3 G-VB make it suitable for a wide range of power conversion and switch control applications, providing excellent performance and reliability.
1. **DC-DC converter**
The IPI180N10N3 G-VB is suitable for high-efficiency DC-DC converters, especially in scenarios requiring high current and low loss, such as servers, communication equipment, and industrial power supplies. Its low on-resistance and high current capability enable it to minimize energy loss and improve efficiency during high power conversion.
2. **Automotive electronic systems**
In automotive power management modules and control systems, the device can be used as a power switch or for motor drive systems in electric vehicles. The high current capability and high voltage resistance of the IPI180N10N3 G-VB make it excellent in battery management systems (BMS) and efficient motor control units (MCUs).
3. **Motor drive applications**
This MOSFET plays an indispensable role in motor drive systems, especially in situations where high current switching is required. It can be used for motor control in industrial equipment, driver circuits in home appliances, and motor drive systems in power tools.
4. **Power Management and Load Control Module**
In high-power power management, this MOSFET can be used as a load switch device, suitable for intelligent power modules and industrial automation systems. Its low on-resistance ensures low power consumption and high efficiency of equipment operation, and provides stable performance in load control and protection circuits.
The characteristics of IPI180N10N3 G-VB make it suitable for a wide range of power conversion and switch control applications, providing excellent performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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