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IPI139N08N3 G-VB Product details
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Product Introduction
IPI139N08N3 G-VB is a high-performance single N-channel MOSFET in TO262 package, designed for high current and high efficiency applications. Its drain-source voltage (VDS) is 80V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is 3V. The on-resistance of this MOSFET is 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, and it can support a drain current (ID) of up to 85A. Using advanced Trench technology, IPI139N08N3 G-VB provides extremely low on-resistance and excellent current handling capability, suitable for high-efficiency power switching applications and high current handling scenarios.
IPI139N08N3 G-VB is a high-performance single N-channel MOSFET in TO262 package, designed for high current and high efficiency applications. Its drain-source voltage (VDS) is 80V, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is 3V. The on-resistance of this MOSFET is 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, and it can support a drain current (ID) of up to 85A. Using advanced Trench technology, IPI139N08N3 G-VB provides extremely low on-resistance and excellent current handling capability, suitable for high-efficiency power switching applications and high current handling scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Parameter description
1. **Package type**: TO262
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 80V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
7. **Drain current (ID)**: 85A
8. **Technology**: Trench technology
9. **Gate charge (Qg)**: Moderate, suitable for fast switching applications
10. **Operating temperature range**: -55°C to 175°C
11. **Power consumption (Ptot)**: Suitable for high power applications with good heat dissipation performance
1. **Package type**: TO262
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 80V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
7. **Drain current (ID)**: 85A
8. **Technology**: Trench technology
9. **Gate charge (Qg)**: Moderate, suitable for fast switching applications
10. **Operating temperature range**: -55°C to 175°C
11. **Power consumption (Ptot)**: Suitable for high power applications with good heat dissipation performance
Domain and module applications：
Applicable fields and modules
1. **Power converter and voltage regulator module**: IPI139N08N3 G-VB performs well in high-efficiency power converter and voltage regulator modules. Its low on-resistance and high current handling capability enable it to improve power conversion efficiency and reduce power loss, and is particularly suitable for high-efficiency DC-DC converters and switching power supplies.
2. **Motor controller**: In motor control applications, such as industrial motor drive systems and electric vehicle motor controllers, IPI139N08N3 G-VB is able to handle high current loads and provide stable switching performance. Its high current carrying capacity and low on-resistance ensure high efficiency and reliability of motor control.
3. **Automotive electronic systems**: For automotive electronic systems, including battery management systems and power management modules for electric vehicles, IPI139N08N3 G-VB is able to handle high current loads and provide high-efficiency switching functions. Its low on-resistance and high current handling capability help improve system efficiency and reliability, especially in battery management and high-power switching applications.
4. **Consumer Electronics**: In consumer electronics such as high-power chargers and power adapters, this MOSFET is able to handle large currents and provide stable switching performance. Its high current carrying capacity and low power consumption characteristics help improve the efficiency of the device and optimize energy consumption, making it suitable for electronic products that require high efficiency and high current control.
The high current handling capability and low on-resistance of the IPI139N08N3 G-VB make it excellent in a variety of high-efficiency and high-power applications, especially in power management and power control systems that require stability and high efficiency.
1. **Power converter and voltage regulator module**: IPI139N08N3 G-VB performs well in high-efficiency power converter and voltage regulator modules. Its low on-resistance and high current handling capability enable it to improve power conversion efficiency and reduce power loss, and is particularly suitable for high-efficiency DC-DC converters and switching power supplies.
2. **Motor controller**: In motor control applications, such as industrial motor drive systems and electric vehicle motor controllers, IPI139N08N3 G-VB is able to handle high current loads and provide stable switching performance. Its high current carrying capacity and low on-resistance ensure high efficiency and reliability of motor control.
3. **Automotive electronic systems**: For automotive electronic systems, including battery management systems and power management modules for electric vehicles, IPI139N08N3 G-VB is able to handle high current loads and provide high-efficiency switching functions. Its low on-resistance and high current handling capability help improve system efficiency and reliability, especially in battery management and high-power switching applications.
4. **Consumer Electronics**: In consumer electronics such as high-power chargers and power adapters, this MOSFET is able to handle large currents and provide stable switching performance. Its high current carrying capacity and low power consumption characteristics help improve the efficiency of the device and optimize energy consumption, making it suitable for electronic products that require high efficiency and high current control.
The high current handling capability and low on-resistance of the IPI139N08N3 G-VB make it excellent in a variety of high-efficiency and high-power applications, especially in power management and power control systems that require stability and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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