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IPI126N10N3 G-VB Product details
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Product Introduction:
IPI126N10N3 G-VB is a high-performance single N-channel MOSFET in TO262 package and manufactured using advanced Trench technology. This MOSFET is designed for high voltage and high current applications and can withstand drain-source voltage (VDS) up to 100V and continuous drain current (ID) of 100A. Its gate voltage (VGS) range is ±20V and the gate threshold voltage (Vth) is 2.5V, which allows it to be turned on stably at a lower gate voltage. The on-resistance (RDS(ON)) is 10mΩ @ VGS=4.5V and 9mΩ @ VGS=10V at different gate voltages, respectively, providing excellent current transfer performance and low power loss, making it ideal for applications requiring high efficiency and high power.
IPI126N10N3 G-VB is a high-performance single N-channel MOSFET in TO262 package and manufactured using advanced Trench technology. This MOSFET is designed for high voltage and high current applications and can withstand drain-source voltage (VDS) up to 100V and continuous drain current (ID) of 100A. Its gate voltage (VGS) range is ±20V and the gate threshold voltage (Vth) is 2.5V, which allows it to be turned on stably at a lower gate voltage. The on-resistance (RDS(ON)) is 10mΩ @ VGS=4.5V and 9mΩ @ VGS=10V at different gate voltages, respectively, providing excellent current transfer performance and low power loss, making it ideal for applications requiring high efficiency and high power.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description:
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench technology
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples:
1. **High-power DC-DC converter**: The low on-resistance and high current capability of the IPI126N10N3 G-VB make it an excellent performer in high-power DC-DC converters. It is suitable for buck and boost converters, and can provide efficient energy conversion in high current and high voltage environments, reduce power losses, and improve conversion efficiency.
2. **Power management system**: In power management systems, this MOSFET can handle high current loads and is suitable for applications such as power switching, battery management, and load switching. Its low on-resistance and high current capability ensure efficient energy management and stable operation of the system.
3. **Electric vehicle drive system**: The IPI126N10N3 G-VB is suitable for electric motor control and battery management systems in electric vehicles. Its high current handling capability and low power loss can improve the performance and endurance of electric vehicles, and ensure reliable electric motor drive and battery management.
4. **Power Inverter**: In power inverter applications, such as photovoltaic inverters and wind power inverters, this MOSFET is capable of handling high voltage and high current loads. Its efficient switching performance and low on-resistance ensure efficient and stable operation of the inverter, suitable for power conversion and management in renewable energy systems.
In these high power applications, the IPI126N10N3 G-VB provides efficient performance and reliable power management through its excellent current handling capability and low on-resistance, making it an ideal choice for a variety of high power switching and power conversion applications.
1. **High-power DC-DC converter**: The low on-resistance and high current capability of the IPI126N10N3 G-VB make it an excellent performer in high-power DC-DC converters. It is suitable for buck and boost converters, and can provide efficient energy conversion in high current and high voltage environments, reduce power losses, and improve conversion efficiency.
2. **Power management system**: In power management systems, this MOSFET can handle high current loads and is suitable for applications such as power switching, battery management, and load switching. Its low on-resistance and high current capability ensure efficient energy management and stable operation of the system.
3. **Electric vehicle drive system**: The IPI126N10N3 G-VB is suitable for electric motor control and battery management systems in electric vehicles. Its high current handling capability and low power loss can improve the performance and endurance of electric vehicles, and ensure reliable electric motor drive and battery management.
4. **Power Inverter**: In power inverter applications, such as photovoltaic inverters and wind power inverters, this MOSFET is capable of handling high voltage and high current loads. Its efficient switching performance and low on-resistance ensure efficient and stable operation of the inverter, suitable for power conversion and management in renewable energy systems.
In these high power applications, the IPI126N10N3 G-VB provides efficient performance and reliable power management through its excellent current handling capability and low on-resistance, making it an ideal choice for a variety of high power switching and power conversion applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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