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IPI100N08N3 G-VB Product details
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IPI100N08N3 G-VB MOSFET Product Introduction
The IPI100N08N3 G-VB is a high-performance N-channel MOSFET in a TO262 package, designed for applications requiring high current and high efficiency. The MOSFET can withstand drain-source voltages (VDS) up to 80V and supports gate-source voltages (VGS) of ±20V. Its gate threshold voltage (Vth) is 3V and uses advanced Trench technology to provide extremely low on-resistance. At VGS = 10V, its on-resistance (RDS(ON)) is only 6mΩ and can handle drain currents up to 85A. This makes the IPI100N08N3 G-VB suitable for a variety of high-power power converters, electric vehicle systems and industrial applications.
The IPI100N08N3 G-VB is a high-performance N-channel MOSFET in a TO262 package, designed for applications requiring high current and high efficiency. The MOSFET can withstand drain-source voltages (VDS) up to 80V and supports gate-source voltages (VGS) of ±20V. Its gate threshold voltage (Vth) is 3V and uses advanced Trench technology to provide extremely low on-resistance. At VGS = 10V, its on-resistance (RDS(ON)) is only 6mΩ and can handle drain currents up to 85A. This makes the IPI100N08N3 G-VB suitable for a variety of high-power power converters, electric vehicle systems and industrial applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
IPI100N08N3 G-VB Detailed parameter description
1. **Package type**: TO262
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 80V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 10V
- 10mΩ @ VGS = 4.5V
7. **Drain current (ID)**: 85A
8. **Technology type**: Trench
9. **Power dissipation (Ptot)**: Typically 250W
10. **Maximum pulse current (ID, pulse)**: Up to 200A
11. **Input capacitance (Ciss)**: Approx. 5000pF
12. **Gate charge (Qg)**: Typical 250nC
13. **Reverse recovery time (Trr)**: Typical 50ns
14. **Operating temperature range**: -55°C to 175°C
1. **Package type**: TO262
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 80V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 10V
- 10mΩ @ VGS = 4.5V
7. **Drain current (ID)**: 85A
8. **Technology type**: Trench
9. **Power dissipation (Ptot)**: Typically 250W
10. **Maximum pulse current (ID, pulse)**: Up to 200A
11. **Input capacitance (Ciss)**: Approx. 5000pF
12. **Gate charge (Qg)**: Typical 250nC
13. **Reverse recovery time (Trr)**: Typical 50ns
14. **Operating temperature range**: -55°C to 175°C
Domain and module applications：
Applications and module examples
1. **High-power DC-DC converters**:
The IPI100N08N3 G-VB is suitable for high-power DC-DC converters. Its low on-resistance and high current handling capability enable it to provide efficient power conversion under high-frequency switching and high-load conditions, reducing energy loss and improving conversion efficiency.
2. **Electric Vehicle (EV) Power Management**:
In the power management system of electric vehicles, this MOSFET can be used for battery management, power switching and motor drive. Its high current handling capability and low on-resistance ensure efficient energy transfer, improving the overall performance and battery life of the electric vehicle system.
3. **Industrial Power Modules**:
The IPI100N08N3 G-VB is suitable for industrial power modules such as power regulators and motor drive systems. Its excellent current handling capability and low on-resistance enable it to perform stably in high-power applications, ensuring the efficiency and reliability of the system.
4. **High-power switching and power protection**:
This MOSFET is also suitable for high-power switching and power protection circuits. It can handle high currents, provide efficient switching control and overcurrent protection, and ensure safe and stable operation of the system.
With its high current capability and low on-resistance, IPI100N08N3 G-VB provides reliable performance in a variety of high-power and high-efficiency applications, ensuring the stability and efficiency of the power system.
1. **High-power DC-DC converters**:
The IPI100N08N3 G-VB is suitable for high-power DC-DC converters. Its low on-resistance and high current handling capability enable it to provide efficient power conversion under high-frequency switching and high-load conditions, reducing energy loss and improving conversion efficiency.
2. **Electric Vehicle (EV) Power Management**:
In the power management system of electric vehicles, this MOSFET can be used for battery management, power switching and motor drive. Its high current handling capability and low on-resistance ensure efficient energy transfer, improving the overall performance and battery life of the electric vehicle system.
3. **Industrial Power Modules**:
The IPI100N08N3 G-VB is suitable for industrial power modules such as power regulators and motor drive systems. Its excellent current handling capability and low on-resistance enable it to perform stably in high-power applications, ensuring the efficiency and reliability of the system.
4. **High-power switching and power protection**:
This MOSFET is also suitable for high-power switching and power protection circuits. It can handle high currents, provide efficient switching control and overcurrent protection, and ensure safe and stable operation of the system.
With its high current capability and low on-resistance, IPI100N08N3 G-VB provides reliable performance in a variety of high-power and high-efficiency applications, ensuring the stability and efficiency of the power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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