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IPI086N10N3 G-VB Product details
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IPI086N10N3 G-VB MOSFET Product Introduction
IPI086N10N3 G-VB is a high-performance N-channel MOSFET in TO262 package, designed for high voltage and high current applications. This MOSFET supports drain-source voltage (VDS) up to 100V and gate-source voltage (VGS) of ±20V, using advanced Trench technology. Its on-resistance is 9mΩ at VGS=10V and 10mΩ at VGS=4.5V, which can provide extremely low power loss. With a drain current carrying capacity of up to 100A, it is very suitable for applications that require high current handling.
IPI086N10N3 G-VB is a high-performance N-channel MOSFET in TO262 package, designed for high voltage and high current applications. This MOSFET supports drain-source voltage (VDS) up to 100V and gate-source voltage (VGS) of ±20V, using advanced Trench technology. Its on-resistance is 9mΩ at VGS=10V and 10mΩ at VGS=4.5V, which can provide extremely low power loss. With a drain current carrying capacity of up to 100A, it is very suitable for applications that require high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench MOSFET technology
- **Package type**: TO262
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench MOSFET technology
Domain and module applications：
Applications and module examples
1. **High-efficiency power converter**: IPI086N10N3 G-VB performs well in DC-DC converters, especially in applications requiring high current and high efficiency. Its low on-resistance and high current capability help improve converter efficiency and reduce energy loss, making it suitable for high power density power modules.
2. **Electric vehicle motor drive**: This MOSFET is able to handle the high current requirements in electric vehicles and provide efficient motor drive control. Its low on-resistance ensures high efficiency of the motor drive system while reducing power consumption and heat, making it suitable for use in the power system of electric vehicles.
3. **High-power load switch**: IPI086N10N3 G-VB is an ideal choice for high-power load switches. Its high current carrying capacity and low conduction loss enable it to maintain stable performance in a variety of high-current load switch applications. It is widely used in high-power switching power supplies and load control modules.
4. **Industrial Power Management System**: In industrial power management systems, this MOSFET provides efficient current switching functions for power management applications that require high current and low power consumption. Its excellent switching performance and high current capability ensure the efficiency and reliability of the system.
The low on-resistance and high current handling capability of the IPI086N10N3 G-VB make it excellent in power conversion, electric vehicle drive, high-power load switching, and industrial power management, and is particularly suitable for applications that require high efficiency and high power density.
1. **High-efficiency power converter**: IPI086N10N3 G-VB performs well in DC-DC converters, especially in applications requiring high current and high efficiency. Its low on-resistance and high current capability help improve converter efficiency and reduce energy loss, making it suitable for high power density power modules.
2. **Electric vehicle motor drive**: This MOSFET is able to handle the high current requirements in electric vehicles and provide efficient motor drive control. Its low on-resistance ensures high efficiency of the motor drive system while reducing power consumption and heat, making it suitable for use in the power system of electric vehicles.
3. **High-power load switch**: IPI086N10N3 G-VB is an ideal choice for high-power load switches. Its high current carrying capacity and low conduction loss enable it to maintain stable performance in a variety of high-current load switch applications. It is widely used in high-power switching power supplies and load control modules.
4. **Industrial Power Management System**: In industrial power management systems, this MOSFET provides efficient current switching functions for power management applications that require high current and low power consumption. Its excellent switching performance and high current capability ensure the efficiency and reliability of the system.
The low on-resistance and high current handling capability of the IPI086N10N3 G-VB make it excellent in power conversion, electric vehicle drive, high-power load switching, and industrial power management, and is particularly suitable for applications that require high efficiency and high power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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