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IPI076N12N3 G-VB Product details
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1. IPI076N12N3 G-VB Product Introduction
IPI076N12N3 G-VB is a high-performance single N-channel MOSFET in TO262 package. This MOSFET is designed for high-voltage, high-current applications, with a maximum drain-source voltage of 100V and a drain current carrying capacity of up to 100A. Its gate-source voltage range is ±20V, the gate threshold voltage is 2.5V, and the on-resistance is as low as 9mΩ (at VGS=10V). Using advanced Trench technology, this MOSFET excels in switching speed and conductivity, and is very suitable for high-power and high-frequency applications.
IPI076N12N3 G-VB is a high-performance single N-channel MOSFET in TO262 package. This MOSFET is designed for high-voltage, high-current applications, with a maximum drain-source voltage of 100V and a drain current carrying capacity of up to 100A. Its gate-source voltage range is ±20V, the gate threshold voltage is 2.5V, and the on-resistance is as low as 9mΩ (at VGS=10V). Using advanced Trench technology, this MOSFET excels in switching speed and conductivity, and is very suitable for high-power and high-frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. IPI076N12N3 G-VB Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 9mΩ@VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench (trench technology)
- **Other features**: low on-resistance, fast switching speed, high current carrying capacity, suitable for high frequency and high power applications.
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 9mΩ@VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench (trench technology)
- **Other features**: low on-resistance, fast switching speed, high current carrying capacity, suitable for high frequency and high power applications.
Domain and module applications：
3. Application fields and module examples of IPI076N12N3 G-VB
1. **High voltage power converter**: IPI076N12N3 G-VB is very suitable for high voltage power converters due to its high drain-source voltage of up to 100V and low on-resistance. This enables it to efficiently handle high voltage current loads, improve power conversion efficiency, and reduce energy loss.
2. **Electric vehicle inverter**: In the inverter of electric vehicles, this MOSFET is able to handle high current and high voltage requirements and is suitable for power conversion and motor drive systems in electric vehicles. Its excellent conductivity and low on-resistance help improve the overall efficiency and reliability of the system.
3. **High power DC-DC converter**: In high power DC-DC converters, the low on-resistance and high current capability of IPI076N12N3 G-VB enable it to efficiently perform power conversion. This is especially important for devices that require high power output, such as servers and power-intensive applications.
4. **Industrial Power Management**: In industrial power management systems, this MOSFET can be used as a high-efficiency switching element for high-voltage and high-current industrial applications. Its superior switching performance and high current carrying capacity ensure efficient operation and stability of the equipment, meeting various industrial power management needs.
Applications in these fields demonstrate the excellent performance of the IPI076N12N3 G-VB under high voltage and high power conditions, making it a key component in high-efficiency power management and power conversion applications.
1. **High voltage power converter**: IPI076N12N3 G-VB is very suitable for high voltage power converters due to its high drain-source voltage of up to 100V and low on-resistance. This enables it to efficiently handle high voltage current loads, improve power conversion efficiency, and reduce energy loss.
2. **Electric vehicle inverter**: In the inverter of electric vehicles, this MOSFET is able to handle high current and high voltage requirements and is suitable for power conversion and motor drive systems in electric vehicles. Its excellent conductivity and low on-resistance help improve the overall efficiency and reliability of the system.
3. **High power DC-DC converter**: In high power DC-DC converters, the low on-resistance and high current capability of IPI076N12N3 G-VB enable it to efficiently perform power conversion. This is especially important for devices that require high power output, such as servers and power-intensive applications.
4. **Industrial Power Management**: In industrial power management systems, this MOSFET can be used as a high-efficiency switching element for high-voltage and high-current industrial applications. Its superior switching performance and high current carrying capacity ensure efficient operation and stability of the equipment, meeting various industrial power management needs.
Applications in these fields demonstrate the excellent performance of the IPI076N12N3 G-VB under high voltage and high power conditions, making it a key component in high-efficiency power management and power conversion applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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