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IPI072N10N3 G-VB Product details
Back to previous pageProduct introduction：
1. IPI072N10N3 G-VB Product Introduction
IPI072N10N3 G-VB is a high-performance N-channel MOSFET in TO262 package, designed for high current and medium voltage switching applications. Its maximum drain-source breakdown voltage is 100V and can withstand drain currents up to 100A. This MOSFET uses Trench technology and has extremely low on-resistance, thereby maintaining efficient switching performance under high current conditions. The low on-resistance and wide threshold voltage range of IPI072N10N3 G-VB make it very suitable for applications that require efficient current control.
IPI072N10N3 G-VB is a high-performance N-channel MOSFET in TO262 package, designed for high current and medium voltage switching applications. Its maximum drain-source breakdown voltage is 100V and can withstand drain currents up to 100A. This MOSFET uses Trench technology and has extremely low on-resistance, thereby maintaining efficient switching performance under high current conditions. The low on-resistance and wide threshold voltage range of IPI072N10N3 G-VB make it very suitable for applications that require efficient current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. IPI072N10N3 G-VB Detailed parameter description
- **Package type**: TO262
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 100V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 9mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench (trench technology)
- **Package type**: TO262
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 100V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 9mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench (trench technology)
Domain and module applications：
III. Application fields and module examples
1. **High-efficiency power converter**:
In high-efficiency power converters, the low on-resistance and high current capability of IPI072N10N3 G-VB enable it to be used as the main switching element. Its excellent switching characteristics and high voltage resistance can improve the power conversion efficiency and is suitable for applications such as DC-DC converters and AC-DC converters.
2. **Electric vehicle motor drive**:
In electric vehicles, where high current control is required, such as motor drive systems, IPI072N10N3 G-VB is an ideal choice. It can maintain low on-resistance under high load conditions, thereby ensuring efficient operation of electric vehicle motors and improving the performance of the overall power system.
3. **Load switch and protection circuit**:
In various load switch applications, IPI072N10N3 G-VB can handle high current loads, and its low on-resistance ensures efficient switching control. It is suitable for battery switches, load protection circuits and high-power switching applications, providing stable and reliable load management.
4. **High Power Power Management**:
IPD072N10N3 G-VB is also suitable for high-power power management systems. It can work efficiently under high current and medium voltage conditions, and is suitable for high-power power switches and power regulation modules to provide effective current control and power protection functions.
1. **High-efficiency power converter**:
In high-efficiency power converters, the low on-resistance and high current capability of IPI072N10N3 G-VB enable it to be used as the main switching element. Its excellent switching characteristics and high voltage resistance can improve the power conversion efficiency and is suitable for applications such as DC-DC converters and AC-DC converters.
2. **Electric vehicle motor drive**:
In electric vehicles, where high current control is required, such as motor drive systems, IPI072N10N3 G-VB is an ideal choice. It can maintain low on-resistance under high load conditions, thereby ensuring efficient operation of electric vehicle motors and improving the performance of the overall power system.
3. **Load switch and protection circuit**:
In various load switch applications, IPI072N10N3 G-VB can handle high current loads, and its low on-resistance ensures efficient switching control. It is suitable for battery switches, load protection circuits and high-power switching applications, providing stable and reliable load management.
4. **High Power Power Management**:
IPD072N10N3 G-VB is also suitable for high-power power management systems. It can work efficiently under high current and medium voltage conditions, and is suitable for high-power power switches and power regulation modules to provide effective current control and power protection functions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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