中文
English
IPI070N08N3 G-VB Product details
Back to previous pageProduct introduction：
Product Introduction - IPI070N08N3 G-VB
IPI070N08N3 G-VB is a high-performance single N-channel power MOSFET in TO262 package, designed for high current and high efficiency applications. This MOSFET has a drain-source withstand voltage of 80V and a drain current carrying capacity of 85A. It uses Trench technology to provide low on-resistance (RDS(ON) is 6mΩ @ VGS=10V), ensuring extremely low power consumption and high efficiency in switching applications. This feature makes it excel in applications requiring high current and low power consumption.
IPI070N08N3 G-VB is a high-performance single N-channel power MOSFET in TO262 package, designed for high current and high efficiency applications. This MOSFET has a drain-source withstand voltage of 80V and a drain current carrying capacity of 85A. It uses Trench technology to provide low on-resistance (RDS(ON) is 6mΩ @ VGS=10V), ensuring extremely low power consumption and high efficiency in switching applications. This feature makes it excel in applications requiring high current and low power consumption.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology type**: Trench
- **Thermal performance**: Excellent heat dissipation characteristics, suitable for high power density applications
- **Package type**: TO262
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology type**: Trench
- **Thermal performance**: Excellent heat dissipation characteristics, suitable for high power density applications
Domain and module applications：
Applications and module examples
1. **High-efficiency DC-DC converters**
The low on-resistance and high current capability of the IPI070N08N3 G-VB make it an excellent performer in high-efficiency DC-DC converters. It can efficiently handle power conversion tasks, reduce switching losses, and improve overall conversion efficiency. It is widely used in computer power supplies, communication equipment power supplies, and other power management systems.
2. **Electric vehicles and hybrid vehicles**
In the power management and motor drive systems of electric vehicles and hybrid vehicles, this MOSFET provides high current handling capabilities and low power consumption characteristics. It can handle the high current requirements of the motor and ensure stable operation of the system under high loads, improving the efficiency of the vehicle's power system.
3. **Battery management system**
This MOSFET is suitable for battery management systems and can provide efficient switching control during battery charging and discharging. Its low on-resistance and high current capability help improve battery charging efficiency and discharge stability, ensuring the reliability of the battery system.
4. **LED Driver**
In LED driver applications, the low on-resistance of the IPI070N08N3 G-VB helps provide a stable current output to drive high-power LEDs. Its high current capability and low power consumption ensure high brightness and long life of the LEDs while reducing heat generation and energy waste.
5. **Motor Drive System**
This MOSFET is also suitable for motor drive systems, capable of handling high current demands in motor control. Its efficient switching performance and low on-resistance make it an ideal choice in motor drive applications, helping to improve system efficiency and performance.
1. **High-efficiency DC-DC converters**
The low on-resistance and high current capability of the IPI070N08N3 G-VB make it an excellent performer in high-efficiency DC-DC converters. It can efficiently handle power conversion tasks, reduce switching losses, and improve overall conversion efficiency. It is widely used in computer power supplies, communication equipment power supplies, and other power management systems.
2. **Electric vehicles and hybrid vehicles**
In the power management and motor drive systems of electric vehicles and hybrid vehicles, this MOSFET provides high current handling capabilities and low power consumption characteristics. It can handle the high current requirements of the motor and ensure stable operation of the system under high loads, improving the efficiency of the vehicle's power system.
3. **Battery management system**
This MOSFET is suitable for battery management systems and can provide efficient switching control during battery charging and discharging. Its low on-resistance and high current capability help improve battery charging efficiency and discharge stability, ensuring the reliability of the battery system.
4. **LED Driver**
In LED driver applications, the low on-resistance of the IPI070N08N3 G-VB helps provide a stable current output to drive high-power LEDs. Its high current capability and low power consumption ensure high brightness and long life of the LEDs while reducing heat generation and energy waste.
5. **Motor Drive System**
This MOSFET is also suitable for motor drive systems, capable of handling high current demands in motor control. Its efficient switching performance and low on-resistance make it an ideal choice in motor drive applications, helping to improve system efficiency and performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
