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IPI057N08N3 G-VB Product details
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Product Introduction:
IPI057N08N3 G-VB is a high-performance single N-channel MOSFET with TO262 package type, designed for applications requiring high current and low on-resistance. It has a drain-source voltage (VDS) of 80V and is suitable for medium voltage environments. This MOSFET supports a gate-source voltage (VGS) of ±20V, and its turn-on threshold voltage (Vth) is 3V, which allows it to be turned on at a lower gate voltage. Using Trench technology, the IPI057N08N3 G-VB provides extremely low on-resistance of 10mΩ (@VGS=4.5V) and 6mΩ (@VGS=10V), respectively, and can withstand a drain current of up to 85A. This gives it superior performance in high-current applications, effectively reducing power consumption and improving system efficiency.
IPI057N08N3 G-VB is a high-performance single N-channel MOSFET with TO262 package type, designed for applications requiring high current and low on-resistance. It has a drain-source voltage (VDS) of 80V and is suitable for medium voltage environments. This MOSFET supports a gate-source voltage (VGS) of ±20V, and its turn-on threshold voltage (Vth) is 3V, which allows it to be turned on at a lower gate voltage. Using Trench technology, the IPI057N08N3 G-VB provides extremely low on-resistance of 10mΩ (@VGS=4.5V) and 6mΩ (@VGS=10V), respectively, and can withstand a drain current of up to 85A. This gives it superior performance in high-current applications, effectively reducing power consumption and improving system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Parameter description:
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology type**: Trench
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology type**: Trench
Domain and module applications：
Applications and modules:
1. **High-efficiency power conversion**: The IPI057N08N3 G-VB is ideal for high-efficiency power converters such as DC-DC converters and AC-DC converters due to its extremely low on-resistance and high current carrying capacity. In these applications, it can provide efficient power conversion, reduce power consumption and improve the overall performance of the system.
2. **Motor drive**: In motor drive systems that require high current, such as industrial motors and electric vehicle motors, this MOSFET can effectively handle large currents to ensure stable operation and efficient drive of the motor.
3. **Switching power supply module**: This MOSFET is suitable for switching power supply modules, including computer power supplies and battery chargers. Its low on-resistance reduces switching losses and improves the overall efficiency and reliability of the power supply.
4. **Load switch**: In high-power load switching applications, such as power management systems and load control systems, the IPI057N08N3 G-VB can provide high current and low power consumption switching control to ensure stable switching of the load and effective power distribution.
5. **Automotive Electronics**: In automotive electronic systems, such as electric power steering systems and high-power battery management systems, the IPI057N08N3 G-VB is able to handle large current demands, provide reliable switch control and efficient power management, and support the stable operation of automotive electronic systems.
1. **High-efficiency power conversion**: The IPI057N08N3 G-VB is ideal for high-efficiency power converters such as DC-DC converters and AC-DC converters due to its extremely low on-resistance and high current carrying capacity. In these applications, it can provide efficient power conversion, reduce power consumption and improve the overall performance of the system.
2. **Motor drive**: In motor drive systems that require high current, such as industrial motors and electric vehicle motors, this MOSFET can effectively handle large currents to ensure stable operation and efficient drive of the motor.
3. **Switching power supply module**: This MOSFET is suitable for switching power supply modules, including computer power supplies and battery chargers. Its low on-resistance reduces switching losses and improves the overall efficiency and reliability of the power supply.
4. **Load switch**: In high-power load switching applications, such as power management systems and load control systems, the IPI057N08N3 G-VB can provide high current and low power consumption switching control to ensure stable switching of the load and effective power distribution.
5. **Automotive Electronics**: In automotive electronic systems, such as electric power steering systems and high-power battery management systems, the IPI057N08N3 G-VB is able to handle large current demands, provide reliable switch control and efficient power management, and support the stable operation of automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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