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IPI052NE7N3 G-VB Product details
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1. IPI052NE7N3 G-VB Product Introduction
IPI052NE7N3 G-VB is a high-performance N-channel power MOSFET in TO262 package. This MOSFET is designed to handle a drain-source voltage (VDS) of 80V and a drain current (ID) of up to 85A. It uses Trench technology to achieve extremely low on-resistance of 10mΩ (VGS=4.5V) and 6mΩ (VGS=10V). Its gate threshold voltage (Vth) is 3V, which enables the MOSFET to achieve efficient and reliable switching performance under common gate drive voltages. The device is suitable for applications requiring high current and low power consumption, providing excellent current handling capability and low conduction losses.
IPI052NE7N3 G-VB is a high-performance N-channel power MOSFET in TO262 package. This MOSFET is designed to handle a drain-source voltage (VDS) of 80V and a drain current (ID) of up to 85A. It uses Trench technology to achieve extremely low on-resistance of 10mΩ (VGS=4.5V) and 6mΩ (VGS=10V). Its gate threshold voltage (Vth) is 3V, which enables the MOSFET to achieve efficient and reliable switching performance under common gate drive voltages. The device is suitable for applications requiring high current and low power consumption, providing excellent current handling capability and low conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. IPI052NE7N3 G-VB Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology**: Trench technology
- **Maximum power dissipation**: Depends on the specific heat dissipation conditions, designed for effective heat dissipation in high current applications
- **Package type**: TO262
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Drain current (ID)**: 85A
- **Technology**: Trench technology
- **Maximum power dissipation**: Depends on the specific heat dissipation conditions, designed for effective heat dissipation in high current applications
Domain and module applications：
3. Application fields and module examples
1. **High-efficiency DC-DC converters**
The low on-resistance and high current handling capability of IPI052NE7N3 G-VB make it very suitable for use in high-efficiency DC-DC converters. In power management modules, this MOSFET can significantly reduce energy loss and improve the overall efficiency of the system. It is widely used in computer power supplies, communication equipment and high-performance electronic systems.
2. **Motor drive system**
In motor drive applications, IPI052NE7N3 G-VB can be used as a power switch in motor control circuits. Its high current capability and low on-resistance ensure high efficiency and stability of the motor drive system, which is suitable for power tools, electric vehicles and industrial automation equipment.
3. **Power switch and load control**
This MOSFET is suitable for power switch and load control modules, especially in applications with high current and low power consumption requirements. Its high current capability and low power consumption make it an ideal load switch solution, which is widely used in consumer electronics, battery management systems and communication equipment.
4. **Automotive Electronic Systems**
In automotive electronic systems, IPI052NE7N3 G-VB can be used for power switching and power management applications. Its high current handling capability and low on-resistance meet the needs of automotive power modules and drive control systems for high efficiency and reliability, and is suitable for automotive electronic control units (ECUs), relay drivers, and power protection circuits.
1. **High-efficiency DC-DC converters**
The low on-resistance and high current handling capability of IPI052NE7N3 G-VB make it very suitable for use in high-efficiency DC-DC converters. In power management modules, this MOSFET can significantly reduce energy loss and improve the overall efficiency of the system. It is widely used in computer power supplies, communication equipment and high-performance electronic systems.
2. **Motor drive system**
In motor drive applications, IPI052NE7N3 G-VB can be used as a power switch in motor control circuits. Its high current capability and low on-resistance ensure high efficiency and stability of the motor drive system, which is suitable for power tools, electric vehicles and industrial automation equipment.
3. **Power switch and load control**
This MOSFET is suitable for power switch and load control modules, especially in applications with high current and low power consumption requirements. Its high current capability and low power consumption make it an ideal load switch solution, which is widely used in consumer electronics, battery management systems and communication equipment.
4. **Automotive Electronic Systems**
In automotive electronic systems, IPI052NE7N3 G-VB can be used for power switching and power management applications. Its high current handling capability and low on-resistance meet the needs of automotive power modules and drive control systems for high efficiency and reliability, and is suitable for automotive electronic control units (ECUs), relay drivers, and power protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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