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IPI045N10N3 G-VB Product details
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Product Introduction
IPI045N10N3 G-VB is a high-performance single N-channel MOSFET packaged in TO262. The drain-source voltage (VDS) of this MOSFET is 100V, the gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 2.5V. Its on-resistance (RDS(ON)) is 10mΩ at VGS=4.5V and 9mΩ at VGS=10V, with a maximum drain current (ID) of up to 100A. Using advanced Trench technology, IPI045N10N3 G-VB provides extremely low on-resistance and excellent current carrying capacity, suitable for high-efficiency power switching applications.
IPI045N10N3 G-VB is a high-performance single N-channel MOSFET packaged in TO262. The drain-source voltage (VDS) of this MOSFET is 100V, the gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 2.5V. Its on-resistance (RDS(ON)) is 10mΩ at VGS=4.5V and 9mΩ at VGS=10V, with a maximum drain current (ID) of up to 100A. Using advanced Trench technology, IPI045N10N3 G-VB provides extremely low on-resistance and excellent current carrying capacity, suitable for high-efficiency power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Parameter description
1. **Package type**: TO262
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 2.5V
6. **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
7. **Drain current (ID)**: 100A
8. **Technology**: Trench technology
9. **Gate charge (Qg)**: Moderate, suitable for fast switching applications
10. **Operating temperature range**: -55°C to 175°C
11. **Power consumption (Ptot)**: Suitable for high power applications, with good heat dissipation performance
1. **Package type**: TO262
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 2.5V
6. **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
7. **Drain current (ID)**: 100A
8. **Technology**: Trench technology
9. **Gate charge (Qg)**: Moderate, suitable for fast switching applications
10. **Operating temperature range**: -55°C to 175°C
11. **Power consumption (Ptot)**: Suitable for high power applications, with good heat dissipation performance
Domain and module applications：
Applicable fields and modules
1. **High-efficiency power management system**: IPI045N10N3 G-VB performs well in high-efficiency switching power supplies (SMPS) and DC-DC converters. Its extremely low on-resistance and high current handling capability enable it to reduce power loss and improve conversion efficiency, making it very suitable for use in high-efficiency power modules such as computer power supplies, communication equipment power supplies, etc.
2. **Motor driver**: In motor drive applications, such as motor controllers for electric vehicles and industrial motor drive systems, IPI045N10N3 G-VB is able to handle large current loads and provide stable switching performance. Its high current carrying capacity and low on-resistance ensure high efficiency and reliability of motor control.
3. **Automotive electronic systems**: In the field of automotive electronics, including power management systems for electric and hybrid vehicles, this MOSFET is able to handle high currents and provide stable switching functions. Its low on-resistance and high current handling capability help improve system efficiency and reliability, especially in battery management and high-power switching applications.
4. **Consumer Electronics**: For high-power consumer electronics such as chargers, power adapters, and LED drivers, the IPI045N10N3 G-VB is able to handle high current loads and provide efficient switching performance. Its high current carrying capacity and low power consumption characteristics help improve the efficiency of the device and optimize energy consumption, making it suitable for high-performance electronics and power control applications.
The high current handling capability and low on-resistance of this MOSFET make it excellent in a variety of high-performance and high-power applications, especially in power management and power control systems that require high performance and stability.
1. **High-efficiency power management system**: IPI045N10N3 G-VB performs well in high-efficiency switching power supplies (SMPS) and DC-DC converters. Its extremely low on-resistance and high current handling capability enable it to reduce power loss and improve conversion efficiency, making it very suitable for use in high-efficiency power modules such as computer power supplies, communication equipment power supplies, etc.
2. **Motor driver**: In motor drive applications, such as motor controllers for electric vehicles and industrial motor drive systems, IPI045N10N3 G-VB is able to handle large current loads and provide stable switching performance. Its high current carrying capacity and low on-resistance ensure high efficiency and reliability of motor control.
3. **Automotive electronic systems**: In the field of automotive electronics, including power management systems for electric and hybrid vehicles, this MOSFET is able to handle high currents and provide stable switching functions. Its low on-resistance and high current handling capability help improve system efficiency and reliability, especially in battery management and high-power switching applications.
4. **Consumer Electronics**: For high-power consumer electronics such as chargers, power adapters, and LED drivers, the IPI045N10N3 G-VB is able to handle high current loads and provide efficient switching performance. Its high current carrying capacity and low power consumption characteristics help improve the efficiency of the device and optimize energy consumption, making it suitable for high-performance electronics and power control applications.
The high current handling capability and low on-resistance of this MOSFET make it excellent in a variety of high-performance and high-power applications, especially in power management and power control systems that require high performance and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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