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IPI041N12N3 G-VB Product details
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Product Introduction:
IPI041N12N3 G-VB is a high-performance single N-channel MOSFET in TO262 package and based on advanced Trench technology. Capable of handling drain-source voltage (VDS) up to 100V and continuous drain current (ID) of 100A, this MOSFET is suitable for high voltage and high current applications. Its gate voltage (VGS) range is ±20V and gate threshold voltage (Vth) is 2.5V, ensuring that it can switch reliably at lower gate voltages. Its on-resistance (RDS(ON)) is 10mΩ @ VGS=4.5V and 9mΩ @ VGS=10V at different gate voltages, providing excellent current transfer performance and low power loss, making it very suitable for high power and high efficiency application scenarios.
IPI041N12N3 G-VB is a high-performance single N-channel MOSFET in TO262 package and based on advanced Trench technology. Capable of handling drain-source voltage (VDS) up to 100V and continuous drain current (ID) of 100A, this MOSFET is suitable for high voltage and high current applications. Its gate voltage (VGS) range is ±20V and gate threshold voltage (Vth) is 2.5V, ensuring that it can switch reliably at lower gate voltages. Its on-resistance (RDS(ON)) is 10mΩ @ VGS=4.5V and 9mΩ @ VGS=10V at different gate voltages, providing excellent current transfer performance and low power loss, making it very suitable for high power and high efficiency application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description:
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench technology
- **Package type**: TO262
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Application areas and module examples:
1. **High-power DC-DC converter**: The low on-resistance and high current handling capability of IPI041N12N3 G-VB make it very suitable for use in high-power DC-DC converters. Especially in buck or boost converters that require high current transmission and low power loss, it can effectively improve conversion efficiency and reduce energy loss.
2. **Power management system**: In the power management system, this MOSFET can be used for functions such as power switching, load switching, and power protection. It can operate stably under high voltage and high current conditions, providing reliable power control and management.
3. **Electric vehicle system**: IPI041N12N3 G-VB can be used in the drive system of electric vehicles, including electric motor control and battery management system. Its high current capability and excellent switching performance ensure efficient operation and long driving range of electric vehicles.
4. **Power Inverter**: In power inverters, such as photovoltaic inverters and wind power inverters, this MOSFET can handle high voltage and high current loads, improve the efficiency and stability of the inverter, and is suitable for power conversion and management in renewable energy systems.
In these applications, the IPI041N12N3 G-VB can provide excellent performance and efficient power management through its high current handling capability and low on-resistance, and is suitable for a variety of high-power switching application scenarios.
1. **High-power DC-DC converter**: The low on-resistance and high current handling capability of IPI041N12N3 G-VB make it very suitable for use in high-power DC-DC converters. Especially in buck or boost converters that require high current transmission and low power loss, it can effectively improve conversion efficiency and reduce energy loss.
2. **Power management system**: In the power management system, this MOSFET can be used for functions such as power switching, load switching, and power protection. It can operate stably under high voltage and high current conditions, providing reliable power control and management.
3. **Electric vehicle system**: IPI041N12N3 G-VB can be used in the drive system of electric vehicles, including electric motor control and battery management system. Its high current capability and excellent switching performance ensure efficient operation and long driving range of electric vehicles.
4. **Power Inverter**: In power inverters, such as photovoltaic inverters and wind power inverters, this MOSFET can handle high voltage and high current loads, improve the efficiency and stability of the inverter, and is suitable for power conversion and management in renewable energy systems.
In these applications, the IPI041N12N3 G-VB can provide excellent performance and efficient power management through its high current handling capability and low on-resistance, and is suitable for a variety of high-power switching application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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