中文
English
IPI032N06N3 G-VB Product details
Back to previous pageProduct introduction：
IPI032N06N3 G-VB MOSFET Product Introduction
The IPI032N06N3 G-VB is a high-performance N-channel MOSFET designed for high current and high efficiency applications. This MOSFET uses a TO262 package and can withstand a drain-source voltage (VDS) of up to 60V and a gate-source voltage (VGS) of ±20V. It has a gate threshold voltage (Vth) of 3.5V and uses advanced Trench technology to provide extremely low on-resistance. At VGS = 10V, its on-resistance (RDS(ON)) is 2.8mΩ and can handle drain currents up to 210A. These features make the IPI032N06N3 G-VB ideal for high-power and high-efficiency power conversion, industrial power supplies, and electric vehicle systems.
The IPI032N06N3 G-VB is a high-performance N-channel MOSFET designed for high current and high efficiency applications. This MOSFET uses a TO262 package and can withstand a drain-source voltage (VDS) of up to 60V and a gate-source voltage (VGS) of ±20V. It has a gate threshold voltage (Vth) of 3.5V and uses advanced Trench technology to provide extremely low on-resistance. At VGS = 10V, its on-resistance (RDS(ON)) is 2.8mΩ and can handle drain currents up to 210A. These features make the IPI032N06N3 G-VB ideal for high-power and high-efficiency power conversion, industrial power supplies, and electric vehicle systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
IPI032N06N3 G-VB Detailed parameter description
1. **Package type**: TO262
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 2.8mΩ @ VGS = 10V
7. **Drain current (ID)**: 210A
8. **Technology type**: Trench
9. **Power dissipation (Ptot)**: Typically 200W
10. **Maximum pulse current (ID, pulse)**: Up to 500A
11. **Input capacitance (Ciss)**: Approx. 6000pF
12. **Gate charge (Qg)**: Typical value is 180nC
13. **Reverse recovery time (Trr)**: Typical value is 45ns
14. **Operating temperature range**: -55°C to 175°C
1. **Package type**: TO262
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 2.8mΩ @ VGS = 10V
7. **Drain current (ID)**: 210A
8. **Technology type**: Trench
9. **Power dissipation (Ptot)**: Typically 200W
10. **Maximum pulse current (ID, pulse)**: Up to 500A
11. **Input capacitance (Ciss)**: Approx. 6000pF
12. **Gate charge (Qg)**: Typical value is 180nC
13. **Reverse recovery time (Trr)**: Typical value is 45ns
14. **Operating temperature range**: -55°C to 175°C
Domain and module applications：
Applications and Module Examples
1. **High Power DC-DC Converters**:
The IPI032N06N3 G-VB is suitable for use in high power DC-DC converters, where its low on-resistance and high current handling capability enable it to maintain high efficiency at high switching frequencies and high load conditions, reduce power loss, and improve system stability.
2. **Electric Vehicle (EV) Power Management**:
In the power management system of electric vehicles, this MOSFET can be used for battery management and power switch control. Its high current carrying capability and low on-resistance help ensure efficient energy transfer, optimize the performance of the battery pack, and improve the overall energy efficiency of electric vehicles.
3. **Industrial Power Modules**:
In industrial power modules such as power conditioners and motor drive systems, the IPI032N06N3 G-VB is able to handle high current loads and provide efficient switching control. Its excellent current handling capability and low on-resistance make it suitable for high power applications, ensuring system stability and reliability.
4. **High-power switching and protection circuits**:
This MOSFET is also suitable for high-power switching and protection circuits, capable of handling high currents and providing efficient switching control. Its low on-resistance and high current capability make it suitable for applications that require efficient energy switching and overcurrent protection, ensuring safe and stable system operation.
With its excellent current handling capability and low on-resistance, IPI032N06N3 G-VB provides a reliable solution in a variety of high-power and high-efficiency applications.
1. **High Power DC-DC Converters**:
The IPI032N06N3 G-VB is suitable for use in high power DC-DC converters, where its low on-resistance and high current handling capability enable it to maintain high efficiency at high switching frequencies and high load conditions, reduce power loss, and improve system stability.
2. **Electric Vehicle (EV) Power Management**:
In the power management system of electric vehicles, this MOSFET can be used for battery management and power switch control. Its high current carrying capability and low on-resistance help ensure efficient energy transfer, optimize the performance of the battery pack, and improve the overall energy efficiency of electric vehicles.
3. **Industrial Power Modules**:
In industrial power modules such as power conditioners and motor drive systems, the IPI032N06N3 G-VB is able to handle high current loads and provide efficient switching control. Its excellent current handling capability and low on-resistance make it suitable for high power applications, ensuring system stability and reliability.
4. **High-power switching and protection circuits**:
This MOSFET is also suitable for high-power switching and protection circuits, capable of handling high currents and providing efficient switching control. Its low on-resistance and high current capability make it suitable for applications that require efficient energy switching and overcurrent protection, ensuring safe and stable system operation.
With its excellent current handling capability and low on-resistance, IPI032N06N3 G-VB provides a reliable solution in a variety of high-power and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
