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IPI030N10N3 G-VB Product details
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IPI030N10N3 G-VB MOSFET Product Introduction
The IPI030N10N3 G-VB is a high-performance N-channel MOSFET in a TO262 package designed for high voltage and high current applications. It can withstand drain-source voltages (VDS) up to 100V and gate-source voltages (VGS) of ±20V. This MOSFET uses Trench technology and has a low on-resistance of 9mΩ at VGS=10V and 10mΩ at VGS=4.5V. This low on-resistance enables the IPI030N10N3 G-VB to effectively reduce power losses, while its drain current carrying capacity of up to 100A makes it suitable for applications requiring high current.
The IPI030N10N3 G-VB is a high-performance N-channel MOSFET in a TO262 package designed for high voltage and high current applications. It can withstand drain-source voltages (VDS) up to 100V and gate-source voltages (VGS) of ±20V. This MOSFET uses Trench technology and has a low on-resistance of 9mΩ at VGS=10V and 10mΩ at VGS=4.5V. This low on-resistance enables the IPI030N10N3 G-VB to effectively reduce power losses, while its drain current carrying capacity of up to 100A makes it suitable for applications requiring high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench MOSFET technology
- **Package type**: TO262
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench MOSFET technology
Domain and module applications：
Applications and module examples
1. **High-efficiency power conversion**: The low on-resistance of the IPI030N10N3 G-VB makes it an excellent performer in power conversion applications, especially in DC-DC converters that require high current and high efficiency. Its high current carrying capability and low power consumption can significantly improve the efficiency and reliability of the converter.
2. **Electric vehicle drive system**: In the motor drive system of electric vehicles, this MOSFET is able to handle high current demands and provide stable motor control. Its low on-resistance and high current capability improve the overall efficiency of the electric vehicle system and help extend battery life.
3. **High-power load switching**: The IPI030N10N3 G-VB is suitable for load switching applications that require high current and low power consumption, such as high-power switching power supplies and load switch modules. Its high current capability and low conduction loss ensure stable performance and low heat generation under high current loads.
4. **Industrial Power and Power Management**: In industrial power and power management systems, this MOSFET can effectively switch high current loads and provide efficient current control. Its excellent switching performance and low on-resistance make it suitable for various industrial power applications, ensuring efficient and stable operation of the system.
The low on-resistance and high current handling capability of the IPI030N10N3 G-VB make it widely used in power conversion, electric vehicle drive, high power load switching and industrial power management, especially in applications requiring high efficiency and high power density.
1. **High-efficiency power conversion**: The low on-resistance of the IPI030N10N3 G-VB makes it an excellent performer in power conversion applications, especially in DC-DC converters that require high current and high efficiency. Its high current carrying capability and low power consumption can significantly improve the efficiency and reliability of the converter.
2. **Electric vehicle drive system**: In the motor drive system of electric vehicles, this MOSFET is able to handle high current demands and provide stable motor control. Its low on-resistance and high current capability improve the overall efficiency of the electric vehicle system and help extend battery life.
3. **High-power load switching**: The IPI030N10N3 G-VB is suitable for load switching applications that require high current and low power consumption, such as high-power switching power supplies and load switch modules. Its high current capability and low conduction loss ensure stable performance and low heat generation under high current loads.
4. **Industrial Power and Power Management**: In industrial power and power management systems, this MOSFET can effectively switch high current loads and provide efficient current control. Its excellent switching performance and low on-resistance make it suitable for various industrial power applications, ensuring efficient and stable operation of the system.
The low on-resistance and high current handling capability of the IPI030N10N3 G-VB make it widely used in power conversion, electric vehicle drive, high power load switching and industrial power management, especially in applications requiring high efficiency and high power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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