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IPI024N06N3 G-VB Product details
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1. IPI024N06N3 G-VB Product Introduction
IPI024N06N3 G-VB is a high-performance single N-channel MOSFET in TO262 package. Designed for high-current, high-efficiency applications, this MOSFET has a maximum drain-source voltage of 60V and a drain current carrying capacity of up to 210A. Its gate-source voltage range is ±20V, the gate threshold voltage is 3.5V, and the on-resistance is as low as 2.8mΩ (at VGS=10V). Using advanced Trench technology, this MOSFET excels in switching speed and conductivity, and is particularly suitable for high-power and high-frequency applications.
IPI024N06N3 G-VB is a high-performance single N-channel MOSFET in TO262 package. Designed for high-current, high-efficiency applications, this MOSFET has a maximum drain-source voltage of 60V and a drain current carrying capacity of up to 210A. Its gate-source voltage range is ±20V, the gate threshold voltage is 3.5V, and the on-resistance is as low as 2.8mΩ (at VGS=10V). Using advanced Trench technology, this MOSFET excels in switching speed and conductivity, and is particularly suitable for high-power and high-frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. IPI024N06N3 G-VB Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2.8mΩ@VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench (trench technology)
- **Other features**: low on-resistance, fast switching speed, high current carrying capacity, suitable for high frequency and high power applications.
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2.8mΩ@VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench (trench technology)
- **Other features**: low on-resistance, fast switching speed, high current carrying capacity, suitable for high frequency and high power applications.
Domain and module applications：
III. Application fields and module examples of IPI024N06N3 G-VB
1. **Power converters and inverters**: The low on-resistance and high current capability of IPI024N06N3 G-VB make it an ideal choice for power converters and inverters. It can effectively manage high current loads in the power supply, improve conversion efficiency, reduce energy loss, and ensure stable operation of the system.
2. **Electric vehicle drive system**: In the drive system of electric vehicles, this MOSFET can handle high power currents and is suitable for motor control and power conversion applications. Its high current carrying capacity and low on-resistance enable it to improve the driving performance and overall efficiency of electric vehicles and meet high power requirements.
3. **High-power LED lighting**: IPI024N06N3 G-VB can be used in high-power LED drive systems as a switch and dimming controller. Its superior conductivity and low power consumption characteristics enable it to effectively control the power output of LEDs, provide stable brightness and light efficiency, and improve system energy efficiency.
4. **Industrial Power Management**: In industrial power management systems, this MOSFET can be used as an efficient power switching element for industrial applications that require high current and high efficiency. Its excellent switching performance and low on-resistance help ensure efficient operation of equipment and adapt to various industrial power management needs.
These application areas fully demonstrate the high efficiency, high current carrying capacity and superior switching performance of the IPI024N06N3 G-VB, making it perform well in multiple high-power and high-efficiency applications.
1. **Power converters and inverters**: The low on-resistance and high current capability of IPI024N06N3 G-VB make it an ideal choice for power converters and inverters. It can effectively manage high current loads in the power supply, improve conversion efficiency, reduce energy loss, and ensure stable operation of the system.
2. **Electric vehicle drive system**: In the drive system of electric vehicles, this MOSFET can handle high power currents and is suitable for motor control and power conversion applications. Its high current carrying capacity and low on-resistance enable it to improve the driving performance and overall efficiency of electric vehicles and meet high power requirements.
3. **High-power LED lighting**: IPI024N06N3 G-VB can be used in high-power LED drive systems as a switch and dimming controller. Its superior conductivity and low power consumption characteristics enable it to effectively control the power output of LEDs, provide stable brightness and light efficiency, and improve system energy efficiency.
4. **Industrial Power Management**: In industrial power management systems, this MOSFET can be used as an efficient power switching element for industrial applications that require high current and high efficiency. Its excellent switching performance and low on-resistance help ensure efficient operation of equipment and adapt to various industrial power management needs.
These application areas fully demonstrate the high efficiency, high current carrying capacity and superior switching performance of the IPI024N06N3 G-VB, making it perform well in multiple high-power and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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