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IPF135N03LG-VB Product details
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Product Introduction:
IPF135N03LG-VB is a high-performance single N-channel MOSFET in a TO252 package, designed for applications requiring high current and low on-resistance. It has a maximum drain-source voltage (VDS) of 30V and is suitable for low to medium voltage application environments. The MOSFET supports a gate-source voltage (VGS) of ±20V and has a turn-on threshold voltage (Vth) of 1.7V, which allows it to be effectively turned on at a lower gate voltage. Using Trench technology, the IPF135N03LG-VB has an extremely low on-resistance of 9mΩ (@VGS=4.5V) and 7mΩ (@VGS=10V), respectively, and can withstand a drain current of up to 70A. This makes it an excellent performer in applications that require high current and low power consumption.
IPF135N03LG-VB is a high-performance single N-channel MOSFET in a TO252 package, designed for applications requiring high current and low on-resistance. It has a maximum drain-source voltage (VDS) of 30V and is suitable for low to medium voltage application environments. The MOSFET supports a gate-source voltage (VGS) of ±20V and has a turn-on threshold voltage (Vth) of 1.7V, which allows it to be effectively turned on at a lower gate voltage. Using Trench technology, the IPF135N03LG-VB has an extremely low on-resistance of 9mΩ (@VGS=4.5V) and 7mΩ (@VGS=10V), respectively, and can withstand a drain current of up to 70A. This makes it an excellent performer in applications that require high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology type**: Trench
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology type**: Trench
Domain and module applications：
Application areas and modules:
1. **High-efficiency power management**: IPF135N03LG-VB is suitable for high-efficiency power management systems, such as high-efficiency DC-DC converters and AC-DC converters, due to its extremely low on-resistance. In these applications, it can provide low power consumption and efficient power conversion, improving the performance and energy efficiency of the overall system.
2. **Motor drive**: This MOSFET is suitable for motor drive systems that require high current, such as electric vehicle motors and industrial motor controllers. Its high current carrying capacity and low on-resistance enable it to effectively drive the motor and ensure stable operation of the system.
3. **Switching power supply module**: IPF135N03LG-VB can be used in switching power supply modules, including computer power supplies and chargers. Its low on-resistance reduces switching losses, improves power conversion efficiency and system stability.
4. **Load Switch**: In load switch applications, such as high-power load control and power distribution systems, this MOSFET can provide high current and low power switching control, ensuring reliable switching operation and efficient power distribution.
5. **Automotive Electronics**: In automotive electronic systems, such as electric power steering systems and battery management systems, IPF135N03LG-VB can handle large current demands, provide stable current control and efficient switching performance, and support efficient operation of automotive electronic systems.
1. **High-efficiency power management**: IPF135N03LG-VB is suitable for high-efficiency power management systems, such as high-efficiency DC-DC converters and AC-DC converters, due to its extremely low on-resistance. In these applications, it can provide low power consumption and efficient power conversion, improving the performance and energy efficiency of the overall system.
2. **Motor drive**: This MOSFET is suitable for motor drive systems that require high current, such as electric vehicle motors and industrial motor controllers. Its high current carrying capacity and low on-resistance enable it to effectively drive the motor and ensure stable operation of the system.
3. **Switching power supply module**: IPF135N03LG-VB can be used in switching power supply modules, including computer power supplies and chargers. Its low on-resistance reduces switching losses, improves power conversion efficiency and system stability.
4. **Load Switch**: In load switch applications, such as high-power load control and power distribution systems, this MOSFET can provide high current and low power switching control, ensuring reliable switching operation and efficient power distribution.
5. **Automotive Electronics**: In automotive electronic systems, such as electric power steering systems and battery management systems, IPF135N03LG-VB can handle large current demands, provide stable current control and efficient switching performance, and support efficient operation of automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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