IPF10N03LA-VB Product details
Product introduction:
IPF10N03LA-VB is a high-performance N-channel power MOSFET in TO252 package. This MOSFET is designed to handle a drain-source voltage (VDS) of 30V and a drain current (ID) of up to 70A. It uses Trench technology and has a very low on-resistance of 9mΩ (VGS=4.5V) and 7mΩ (VGS=10V). Its gate threshold voltage (Vth) is 1.7V, which enables reliable switching performance at a lower gate drive voltage. This makes the IPF10N03LA-VB excel in applications that require high current and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Drain current (ID)**: 70A
- **Technology**: Trench technology
- **Maximum power consumption**: Depends on the specific heat dissipation conditions, suitable for effective heat dissipation design in high current applications
Domain and module applications:
1. **DC-DC converter**
The low on-resistance and high current handling capability of IPF10N03LA-VB make it suitable for efficient DC-DC converters. It can provide efficient switching performance under low voltage conditions, thereby improving power conversion efficiency, and is widely used in power management modules, computer power supplies, and communication equipment.
2. **Motor drive system**
In motor drive applications, this MOSFET can be used as a power switch in the motor control circuit to provide stable current control. Its high current capability and low on-resistance can ensure the high efficiency and reliability of the motor drive system, which is suitable for power tools, electric vehicles, and industrial automation equipment.
3. **Power switch and load control**
IPF10N03LA-VB is suitable for a variety of power switch and load control applications. Its high current capability and low power consumption make it an efficient load switch solution, suitable for load control in consumer electronics, battery management systems, and communication equipment.
4. **Automotive Electronics Application**
In automotive electronic systems, this MOSFET can be used for power switches, relay drivers, and protection circuits. Its high current handling capability and low on-resistance enable it to meet the high efficiency and reliability requirements of automotive power modules and drive control systems.
Technical support:
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