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IPF105N03L G-VB Product details

Product introduction:

1. IPF105N03L G-VB Product Introduction:
IPF105N03L G-VB is a single N-channel power MOSFET in TO252 package, designed for high-efficiency switching applications. Its maximum drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) supports ±20V, and has a low turn-on threshold voltage (Vth) of 1.7V, which is convenient for low-voltage driving. This MOSFET uses Trench technology to achieve extremely low on-resistance. The on-resistance (RDS(ON)) of IPF105N03L G-VB is 5mΩ at VGS of 10V and 6mΩ at VGS of 4.5V, and the maximum drain current is 80A. These characteristics make it excel in applications that require high current handling and low power consumption, and it is suitable for high-efficiency power switches and current management systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 80A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. IPF105N03L G-VB Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 80A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Maximum power consumption**: Depends on specific heat dissipation conditions
- **Typical applications**: Power management, high-efficiency switches, load switches, DC-DC converters, etc.

Domain and module applications:

3. Application fields and module examples:
1. **Power management**:
The low on-resistance and high current capability of IPF105N03L G-VB make it ideal for power management systems such as DC-DC converters and power modules. In these applications, it can provide efficient current switching and optimized power conversion to ensure system stability and efficiency.

2. **High-efficiency switching**:
Due to its low on-resistance of 5mΩ, IPF105N03L G-VB performs well in high-efficiency switching circuits. This makes it ideal for switching applications that require high efficiency, such as switching power supplies and current management systems, which can reduce power losses and improve system efficiency.

3. **Load switching**:
The high current handling capability (80A) of IPF105N03L G-VB makes it an ideal choice for load switching applications. It can stably handle large current loads, providing reliable switching performance and low power consumption in battery management systems and high-power load switches.

4. **DC-DC Converter**:
In DC-DC converters, the low on-resistance of IPF105N03L G-VB helps reduce energy loss and improve conversion efficiency. Its high current capability enables it to handle high load currents, suitable for high-efficiency power conversion applications, and supports the power needs of various electronic devices.

The high current handling capability and low on-resistance characteristics of IPF105N03L G-VB make it excellent in power management and switching circuits, providing an ideal solution for a variety of high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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