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IPF05N03LA-VB Product details
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Product Introduction
IPF05N03LA-VB is a high-performance single N-channel MOSFET packaged in TO252. It has a drain-source voltage (VDS) of 20V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 0.5~1.5V. The on-resistance of this MOSFET is 6mΩ (VGS=2.5V) and 4.5mΩ (VGS=4.5V), and the maximum drain current (ID) can reach 100A. Using advanced Trench technology, IPF05N03LA-VB provides extremely low on-resistance and is suitable for applications requiring high current and low power consumption.
IPF05N03LA-VB is a high-performance single N-channel MOSFET packaged in TO252. It has a drain-source voltage (VDS) of 20V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 0.5~1.5V. The on-resistance of this MOSFET is 6mΩ (VGS=2.5V) and 4.5mΩ (VGS=4.5V), and the maximum drain current (ID) can reach 100A. Using advanced Trench technology, IPF05N03LA-VB provides extremely low on-resistance and is suitable for applications requiring high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 20V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 0.5~1.5V
6. **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
7. **Drain current (ID)**: 100A
8. **Technology**: Trench technology
9. **Gate charge (Qg)**: Moderate, suitable for fast switching applications
10. **Operating temperature range**: -55°C to 175°C
11. **Power consumption (Ptot)**: Suitable for high power applications with good thermal management performance
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 20V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 0.5~1.5V
6. **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
7. **Drain current (ID)**: 100A
8. **Technology**: Trench technology
9. **Gate charge (Qg)**: Moderate, suitable for fast switching applications
10. **Operating temperature range**: -55°C to 175°C
11. **Power consumption (Ptot)**: Suitable for high power applications with good thermal management performance
Domain and module applications：
Applicable fields and modules
1. **High-efficiency power management**: IPF05N03LA-VB performs well in power management systems such as high-efficiency switching power supplies (SMPS) and DC-DC converters. Its low on-resistance and high current handling capability enable it to effectively reduce power loss and improve conversion efficiency, making it very suitable for power modules that require high efficiency and low power consumption.
2. **Motor drive**: In motor drives, IPF05N03LA-VB is able to handle large current loads and provide stable switching performance. This makes it suitable for power tools, motor controllers, and other motor drive applications with high current requirements, ensuring efficient operation and long life of the system.
3. **Automotive electronics**: In automotive electronic systems, such as power management and battery control systems for electric vehicles, this MOSFET is able to handle high current loads and provide efficient switching functions. Its low on-resistance and high current carrying capacity help improve the overall efficiency and reliability of electric vehicle systems, especially in battery management and high-power switching applications.
4. **Consumer Electronics**: For high-power consumer electronics such as chargers and power adapters, the IPF05N03LA-VB can handle high current loads and provide stable switching performance. Its high current carrying capacity and low power consumption characteristics help improve the efficiency of the device and optimize energy consumption, making it suitable for electronic products that require high efficiency and high current control.
The high current capability and low on-resistance of this MOSFET make it excel in a variety of power supply and power control applications that require high performance.
1. **High-efficiency power management**: IPF05N03LA-VB performs well in power management systems such as high-efficiency switching power supplies (SMPS) and DC-DC converters. Its low on-resistance and high current handling capability enable it to effectively reduce power loss and improve conversion efficiency, making it very suitable for power modules that require high efficiency and low power consumption.
2. **Motor drive**: In motor drives, IPF05N03LA-VB is able to handle large current loads and provide stable switching performance. This makes it suitable for power tools, motor controllers, and other motor drive applications with high current requirements, ensuring efficient operation and long life of the system.
3. **Automotive electronics**: In automotive electronic systems, such as power management and battery control systems for electric vehicles, this MOSFET is able to handle high current loads and provide efficient switching functions. Its low on-resistance and high current carrying capacity help improve the overall efficiency and reliability of electric vehicle systems, especially in battery management and high-power switching applications.
4. **Consumer Electronics**: For high-power consumer electronics such as chargers and power adapters, the IPF05N03LA-VB can handle high current loads and provide stable switching performance. Its high current carrying capacity and low power consumption characteristics help improve the efficiency of the device and optimize energy consumption, making it suitable for electronic products that require high efficiency and high current control.
The high current capability and low on-resistance of this MOSFET make it excel in a variety of power supply and power control applications that require high performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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