中文
English
IPF05N03LA G-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
IPF05N03LA G-VB is a high-performance single N-channel MOSFET in a TO252 package and manufactured using Trench technology. Designed for low-voltage, high-current applications, this MOSFET is capable of withstanding drain-source voltages (VDS) up to 20V and continuous drain currents (ID) of 100A. Its gate voltage (VGS) range is ±20V, and its gate threshold voltage (Vth) range is 0.5V to 1.5V, which enables the MOSFET to turn on quickly at low gate voltages. The on-resistance (RDS(ON)) is 6mΩ @ VGS=2.5V and 4.5mΩ @ VGS=4.5V at different gate voltages, providing excellent current transfer performance and low switching losses.
IPF05N03LA G-VB is a high-performance single N-channel MOSFET in a TO252 package and manufactured using Trench technology. Designed for low-voltage, high-current applications, this MOSFET is capable of withstanding drain-source voltages (VDS) up to 20V and continuous drain currents (ID) of 100A. Its gate voltage (VGS) range is ±20V, and its gate threshold voltage (Vth) range is 0.5V to 1.5V, which enables the MOSFET to turn on quickly at low gate voltages. The on-resistance (RDS(ON)) is 6mΩ @ VGS=2.5V and 4.5mΩ @ VGS=4.5V at different gate voltages, providing excellent current transfer performance and low switching losses.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench technology
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench technology
Domain and module applications：
Application areas and module examples:
1. **DC-DC converter**: In low-voltage and high-current DC-DC converters, the low on-resistance of IPF05N03LA G-VB makes it very suitable for use as a switching element. It can effectively reduce power loss during the conversion process and improve the overall conversion efficiency, and is suitable for buck and boost converters.
2. **Power management system**: This MOSFET can be widely used in power management systems, such as in battery-powered devices and power distribution modules, to provide efficient current switching and management functions to ensure system stability and reliability.
3. **High-power LED driver**: In high-power LED drive circuits, IPF05N03LA G-VB can provide stable switching operations to control the brightness and power of LEDs, and is suitable for application scenarios that require high current and low on-resistance.
4. **Power Tools and Consumer Electronics**: Due to its high current carrying capacity and low on-resistance, this MOSFET can be used in high-power switching applications in power tools and consumer electronics, improving the performance and service life of the equipment.
These features make the IPF05N03LA G-VB perform well in high-current and low-voltage switching applications, suitable for a variety of application scenarios that require efficient energy conversion and management.
1. **DC-DC converter**: In low-voltage and high-current DC-DC converters, the low on-resistance of IPF05N03LA G-VB makes it very suitable for use as a switching element. It can effectively reduce power loss during the conversion process and improve the overall conversion efficiency, and is suitable for buck and boost converters.
2. **Power management system**: This MOSFET can be widely used in power management systems, such as in battery-powered devices and power distribution modules, to provide efficient current switching and management functions to ensure system stability and reliability.
3. **High-power LED driver**: In high-power LED drive circuits, IPF05N03LA G-VB can provide stable switching operations to control the brightness and power of LEDs, and is suitable for application scenarios that require high current and low on-resistance.
4. **Power Tools and Consumer Electronics**: Due to its high current carrying capacity and low on-resistance, this MOSFET can be used in high-power switching applications in power tools and consumer electronics, improving the performance and service life of the equipment.
These features make the IPF05N03LA G-VB perform well in high-current and low-voltage switching applications, suitable for a variety of application scenarios that require efficient energy conversion and management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
