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IPDH6N03LA G-VB Product details
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IPDH6N03LA G-VB MOSFET Product Introduction
The IPDH6N03LA G-VB is a high-performance N-channel MOSFET in a TO252 package designed for high-efficiency applications. It features a drain-source voltage (VDS) of up to 20V and a gate-source voltage (VGS) of ±20V. The MOSFET has a gate threshold voltage (Vth) between 0.5V and 1.5V and uses advanced Trench technology to provide extremely low on-resistance at low gate-source voltages. Specifically, its on-resistance (RDS(ON)) is 6mΩ at VGS = 2.5V and 4.5mΩ at VGS = 4.5V, capable of carrying drain currents up to 100A. These features make the IPDH6N03LA G-VB suitable for applications that require high switching frequencies and high current handling capabilities.
The IPDH6N03LA G-VB is a high-performance N-channel MOSFET in a TO252 package designed for high-efficiency applications. It features a drain-source voltage (VDS) of up to 20V and a gate-source voltage (VGS) of ±20V. The MOSFET has a gate threshold voltage (Vth) between 0.5V and 1.5V and uses advanced Trench technology to provide extremely low on-resistance at low gate-source voltages. Specifically, its on-resistance (RDS(ON)) is 6mΩ at VGS = 2.5V and 4.5mΩ at VGS = 4.5V, capable of carrying drain currents up to 100A. These features make the IPDH6N03LA G-VB suitable for applications that require high switching frequencies and high current handling capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IPDH6N03LA G-VB Detailed parameter description
1. **Package type**: TO252
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 20V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
6. **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
7. **Drain current (ID)**: 100A
8. **Technology type**: Trench
9. **Power dissipation (Ptot)**: Typically 60W
10. **Maximum pulse current (ID, pulse)**: up to 200A
11. **Input capacitance (Ciss)**: about 2000pF
12. **Gate charge (Qg)**: typ. 90nC
13. **Reverse recovery time (Trr)**: typ. 35ns
14. **Operating temperature range**: -55°C to 175°C
1. **Package type**: TO252
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 20V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
6. **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 2.5V
- 4.5mΩ @ VGS = 4.5V
7. **Drain current (ID)**: 100A
8. **Technology type**: Trench
9. **Power dissipation (Ptot)**: Typically 60W
10. **Maximum pulse current (ID, pulse)**: up to 200A
11. **Input capacitance (Ciss)**: about 2000pF
12. **Gate charge (Qg)**: typ. 90nC
13. **Reverse recovery time (Trr)**: typ. 35ns
14. **Operating temperature range**: -55°C to 175°C
Domain and module applications：
Applications and Module Examples
1. **High-efficiency DC-DC Converters**:
The IPDH6N03LA G-VB is suitable for use in high-efficiency DC-DC converters, especially in applications that require high switching frequencies and high current handling capabilities. Its low on-resistance at low gate-source voltages can effectively improve the overall efficiency of the converter, reduce power consumption, and improve system stability.
2. **Electric Vehicle (EV) Power Management**:
In the power management system of electric vehicles, this MOSFET can be used for battery management and power switch control. Its high current carrying capacity and low on-resistance help ensure efficient energy management of the battery pack and motor, improving the operating efficiency and reliability of electric vehicles.
3. **Power Modules**:
In power modules, such as power management ICs and power regulators, the IPDH6N03LA G-VB is able to handle large currents and provide efficient switching control, making it suitable for applications that require high power density and high efficiency, ensuring stable operation of the system under high load conditions.
4. **Battery protection circuit**:
In the battery protection circuit, this MOSFET can be used as a switching element for overcurrent protection and battery isolation. Its low on-resistance has excellent performance at lower gate-source voltage, which helps to extend battery life and improve the overall safety of the system.
As a high-efficiency N-channel MOSFET, IPDH6N03LA G-VB is widely used in various high-power, high-efficiency power supplies and management modules due to its low on-resistance and high current handling capability.
1. **High-efficiency DC-DC Converters**:
The IPDH6N03LA G-VB is suitable for use in high-efficiency DC-DC converters, especially in applications that require high switching frequencies and high current handling capabilities. Its low on-resistance at low gate-source voltages can effectively improve the overall efficiency of the converter, reduce power consumption, and improve system stability.
2. **Electric Vehicle (EV) Power Management**:
In the power management system of electric vehicles, this MOSFET can be used for battery management and power switch control. Its high current carrying capacity and low on-resistance help ensure efficient energy management of the battery pack and motor, improving the operating efficiency and reliability of electric vehicles.
3. **Power Modules**:
In power modules, such as power management ICs and power regulators, the IPDH6N03LA G-VB is able to handle large currents and provide efficient switching control, making it suitable for applications that require high power density and high efficiency, ensuring stable operation of the system under high load conditions.
4. **Battery protection circuit**:
In the battery protection circuit, this MOSFET can be used as a switching element for overcurrent protection and battery isolation. Its low on-resistance has excellent performance at lower gate-source voltage, which helps to extend battery life and improve the overall safety of the system.
As a high-efficiency N-channel MOSFET, IPDH6N03LA G-VB is widely used in various high-power, high-efficiency power supplies and management modules due to its low on-resistance and high current handling capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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