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IPDH5N03LA G-VB Product details
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IPDH5N03LA G-VB MOSFET Product Introduction
IPDH5N03LA G-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage, high current applications. It supports drain-source voltage (VDS) up to 20V and gate-source voltage (VGS) of ±20V, and uses advanced Trench technology. The MOSFET has a very low on-resistance of 6mΩ at VGS=2.5V and 4.5mΩ at VGS=4.5V, and can withstand drain currents up to 100A. Its excellent performance enables it to have extremely low power consumption and efficient switching performance in high current applications.
IPDH5N03LA G-VB is a high-performance N-channel MOSFET in TO252 package, designed for low voltage, high current applications. It supports drain-source voltage (VDS) up to 20V and gate-source voltage (VGS) of ±20V, and uses advanced Trench technology. The MOSFET has a very low on-resistance of 6mΩ at VGS=2.5V and 4.5mΩ at VGS=4.5V, and can withstand drain currents up to 100A. Its excellent performance enables it to have extremely low power consumption and efficient switching performance in high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 20V | 0.5~1.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench MOSFET technology
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 0.5~1.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=2.5V
- 4.5mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench MOSFET technology
Domain and module applications：
Application fields and module examples
1. **High-efficiency power conversion**: The low on-resistance of IPDH5N03LA G-VB makes it very suitable for use in low-voltage and high-current power converters. Its high current capability and low power consumption improve conversion efficiency and reduce heat generation, making it an ideal choice for high-efficiency DC-DC converters.
2. **Electric vehicle and power tool drive**: In electric vehicles and power tools, this MOSFET can handle high current demands and provide stable motor drive. Its low on-resistance helps improve the overall efficiency of the drive system and reduce energy consumption, making it suitable for motor control and battery management.
3. **Load switch application**: When used in load switch modules, IPDH5N03LA G-VB can efficiently switch high-current loads. Its high current carrying capacity and low conduction loss ensure the reliability of the load switch and is widely used in various high-current switching applications.
4. **Battery Management System (BMS)**: In battery management systems, this MOSFET can be used for current control and protection circuits. Due to its low on-resistance and high current handling capability, it can effectively improve the efficiency of the system and ensure the safety and long life of the battery under high current conditions.
The low on-resistance and high current capability of IPDH5N03LA G-VB make it excellent in power conversion, power tool drive, load switch and battery management, especially suitable for applications requiring high efficiency and high power handling.
1. **High-efficiency power conversion**: The low on-resistance of IPDH5N03LA G-VB makes it very suitable for use in low-voltage and high-current power converters. Its high current capability and low power consumption improve conversion efficiency and reduce heat generation, making it an ideal choice for high-efficiency DC-DC converters.
2. **Electric vehicle and power tool drive**: In electric vehicles and power tools, this MOSFET can handle high current demands and provide stable motor drive. Its low on-resistance helps improve the overall efficiency of the drive system and reduce energy consumption, making it suitable for motor control and battery management.
3. **Load switch application**: When used in load switch modules, IPDH5N03LA G-VB can efficiently switch high-current loads. Its high current carrying capacity and low conduction loss ensure the reliability of the load switch and is widely used in various high-current switching applications.
4. **Battery Management System (BMS)**: In battery management systems, this MOSFET can be used for current control and protection circuits. Due to its low on-resistance and high current handling capability, it can effectively improve the efficiency of the system and ensure the safety and long life of the battery under high current conditions.
The low on-resistance and high current capability of IPDH5N03LA G-VB make it excellent in power conversion, power tool drive, load switch and battery management, especially suitable for applications requiring high efficiency and high power handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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