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IPDH4N03LA G-VB Product details
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1. IPDH4N03LA G-VB Product Introduction
IPDH4N03LA G-VB is a high-performance single N-channel MOSFET in TO252 package. Designed for efficient power management, this MOSFET has a maximum drain-source voltage of 30V and a drain current carrying capacity of up to 100A. Its gate-source voltage range is ±20V, the gate threshold voltage is 1.7V, and the on-resistance is as low as 2mΩ (at VGS=10V). Using Trench technology, this MOSFET excels in switching speed and conductivity, and is very suitable for high current and low power consumption applications.
IPDH4N03LA G-VB is a high-performance single N-channel MOSFET in TO252 package. Designed for efficient power management, this MOSFET has a maximum drain-source voltage of 30V and a drain current carrying capacity of up to 100A. Its gate-source voltage range is ±20V, the gate threshold voltage is 1.7V, and the on-resistance is as low as 2mΩ (at VGS=10V). Using Trench technology, this MOSFET excels in switching speed and conductivity, and is very suitable for high current and low power consumption applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description of IPDH4N03LA G-VB
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ@VGS=4.5V
- 2mΩ@VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench (trench technology)
- **Other features**: low on-resistance, fast switching speed, low gate charge, suitable for high frequency and high power applications.
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ@VGS=4.5V
- 2mΩ@VGS=10V
- **Drain current (ID)**: 100A
- **Technology**: Trench (trench technology)
- **Other features**: low on-resistance, fast switching speed, low gate charge, suitable for high frequency and high power applications.
Domain and module applications：
III. Application fields and module examples of IPDH4N03LA G-VB
1. **High-efficiency power management**: IPDH4N03LA G-VB is very suitable for high-efficiency power management modules such as DC-DC converters and power regulators due to its low on-resistance and high current capability. It can significantly improve power conversion efficiency, reduce energy loss, and ensure stable power supply.
2. **Electric vehicle drive system**: In the motor drive and power conversion system of electric vehicles, this MOSFET can handle high current loads and provide fast switching capabilities. This feature helps to improve the driving performance and overall efficiency of electric vehicles and is suitable for high-power applications in electric vehicles.
3. **High-power LED drive**: In high-power LED lighting systems, IPDH4N03LA G-VB can be used as an efficient switch and dimming controller. Due to its low on-resistance and fast switching characteristics, it can effectively control the power output and brightness of the LED, provide stable lighting effects, and reduce power consumption.
4. **Industrial Automation Equipment**: In industrial automation equipment, IPDH4N03LA G-VB can be used as a power switch and load control element. Its high current carrying capacity and low power consumption make it suitable for power management in various industrial applications to ensure efficient and stable operation of the equipment.
The applications in these fields give full play to the high efficiency and high switching performance of IPDH4N03LA G-VB, making it perform well in high-power and high-efficiency occasions.
1. **High-efficiency power management**: IPDH4N03LA G-VB is very suitable for high-efficiency power management modules such as DC-DC converters and power regulators due to its low on-resistance and high current capability. It can significantly improve power conversion efficiency, reduce energy loss, and ensure stable power supply.
2. **Electric vehicle drive system**: In the motor drive and power conversion system of electric vehicles, this MOSFET can handle high current loads and provide fast switching capabilities. This feature helps to improve the driving performance and overall efficiency of electric vehicles and is suitable for high-power applications in electric vehicles.
3. **High-power LED drive**: In high-power LED lighting systems, IPDH4N03LA G-VB can be used as an efficient switch and dimming controller. Due to its low on-resistance and fast switching characteristics, it can effectively control the power output and brightness of the LED, provide stable lighting effects, and reduce power consumption.
4. **Industrial Automation Equipment**: In industrial automation equipment, IPDH4N03LA G-VB can be used as a power switch and load control element. Its high current carrying capacity and low power consumption make it suitable for power management in various industrial applications to ensure efficient and stable operation of the equipment.
The applications in these fields give full play to the high efficiency and high switching performance of IPDH4N03LA G-VB, making it perform well in high-power and high-efficiency occasions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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