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IPD90R1K2C3-VB Product details
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1. IPD90R1K2C3-VB Product Introduction
IPD90R1K2C3-VB is a high voltage N-channel MOSFET in TO252 package, designed for applications requiring high voltage tolerance. It has a drain-source breakdown voltage of up to 900V and a drain current capability of 7A, suitable for stable operation in high voltage environments. This MOSFET uses SJ_Multi-EPI technology, which can provide excellent voltage resistance and stability, ensuring reliability and performance in high voltage applications.
IPD90R1K2C3-VB is a high voltage N-channel MOSFET in TO252 package, designed for applications requiring high voltage tolerance. It has a drain-source breakdown voltage of up to 900V and a drain current capability of 7A, suitable for stable operation in high voltage environments. This MOSFET uses SJ_Multi-EPI technology, which can provide excellent voltage resistance and stability, ensuring reliability and performance in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD90R1K2C3-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 900V
- **Gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 770mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI (Multilayer EPI technology)
- **Package type**: TO252
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 900V
- **Gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 770mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: SJ_Multi-EPI (Multilayer EPI technology)
Domain and module applications：
III. Application fields and module examples
1. **High-voltage power switch**:
The 900V drain-source breakdown voltage of IPD90R1K2C3-VB makes it very suitable for high-voltage power switch applications. In the switching control of high-voltage DC power supplies, this MOSFET can provide stable switching performance to ensure the safety and reliability of the power system.
2. **Power inverter**:
In power inverters, especially in applications that need to handle high-voltage DC power, IPD90R1K2C3-VB can effectively convert electrical energy. Its high voltage tolerance enables it to work efficiently in the inverter, improving the reliability and efficiency of power conversion.
3. **High-voltage power protection**:
IPD90R1K2C3-VB can be used in high-voltage power protection circuits. In the power system, it can be used as a protection switch to prevent voltage over-limit or over-current conditions from damaging the system, ensuring the stability and safety of the power system.
4. **High voltage drive module**:
In applications that require high voltage drive, such as high voltage motor drive or electrical equipment control, the IPD90R1K2C3-VB can provide the required switching and control functions. Its high voltage tolerance and stable performance enable it to work stably in these high voltage environments, enhancing the overall performance and reliability of the system.
1. **High-voltage power switch**:
The 900V drain-source breakdown voltage of IPD90R1K2C3-VB makes it very suitable for high-voltage power switch applications. In the switching control of high-voltage DC power supplies, this MOSFET can provide stable switching performance to ensure the safety and reliability of the power system.
2. **Power inverter**:
In power inverters, especially in applications that need to handle high-voltage DC power, IPD90R1K2C3-VB can effectively convert electrical energy. Its high voltage tolerance enables it to work efficiently in the inverter, improving the reliability and efficiency of power conversion.
3. **High-voltage power protection**:
IPD90R1K2C3-VB can be used in high-voltage power protection circuits. In the power system, it can be used as a protection switch to prevent voltage over-limit or over-current conditions from damaging the system, ensuring the stability and safety of the power system.
4. **High voltage drive module**:
In applications that require high voltage drive, such as high voltage motor drive or electrical equipment control, the IPD90R1K2C3-VB can provide the required switching and control functions. Its high voltage tolerance and stable performance enable it to work stably in these high voltage environments, enhancing the overall performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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