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IPD90N10S4L-06-VB Product details
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Product Introduction - IPD90N10S4L-06-VB
IPD90N10S4L-06-VB is a high performance single N-channel power MOSFET in TO252 package. Designed for high current, high efficiency applications, this MOSFET has a 100V drain-source withstand voltage and a 100A drain current carrying capacity. It is manufactured using Trench technology and has an extremely low on-resistance (RDS(ON) of 5mΩ @ VGS=10V), making it suitable for applications requiring high current and low conduction losses.
IPD90N10S4L-06-VB is a high performance single N-channel power MOSFET in TO252 package. Designed for high current, high efficiency applications, this MOSFET has a 100V drain-source withstand voltage and a 100A drain current carrying capacity. It is manufactured using Trench technology and has an extremely low on-resistance (RDS(ON) of 5mΩ @ VGS=10V), making it suitable for applications requiring high current and low conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 3V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 3V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 3V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench
- **Thermal performance**: Good heat dissipation characteristics, suitable for high power density applications
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench
- **Thermal performance**: Good heat dissipation characteristics, suitable for high power density applications
Domain and module applications：
Applications and module examples
1. **High-efficiency power converters**
The low on-resistance and high current capability of the IPD90N10S4L-06-VB make it ideal for high-efficiency power converters such as switching power supplies and DC-DC converters. It reduces switching losses, improves power conversion efficiency, and provides stable performance in high-current applications.
2. **Electric vehicle drive systems**
In electric vehicle drive systems, the high current handling capability of this MOSFET enables it to cope with motor control and power management needs. Its low on-resistance helps improve the efficiency and performance of the electric vehicle's powertrain.
3. **Power management modules**
The IPD90N10S4L-06-VB is suitable for a variety of power management modules, such as battery management systems and power modules, where its high current capability and low on-resistance enable it to efficiently manage and distribute power, ensuring stable system operation.
4. **High-power LED driver**
In high-power LED drivers, the high current capability and low on-resistance of the IPD90N10S4L-06-VB help drive high-brightness LEDs, provide stable current output, and reduce power consumption and heat generation, ensuring long life and high brightness of the LEDs.
5. **Motor drive and control**
This MOSFET is also suitable for industrial motor drive and control systems, capable of handling high current loads and providing efficient current switching, suitable for motor control applications requiring high current and high efficiency.
1. **High-efficiency power converters**
The low on-resistance and high current capability of the IPD90N10S4L-06-VB make it ideal for high-efficiency power converters such as switching power supplies and DC-DC converters. It reduces switching losses, improves power conversion efficiency, and provides stable performance in high-current applications.
2. **Electric vehicle drive systems**
In electric vehicle drive systems, the high current handling capability of this MOSFET enables it to cope with motor control and power management needs. Its low on-resistance helps improve the efficiency and performance of the electric vehicle's powertrain.
3. **Power management modules**
The IPD90N10S4L-06-VB is suitable for a variety of power management modules, such as battery management systems and power modules, where its high current capability and low on-resistance enable it to efficiently manage and distribute power, ensuring stable system operation.
4. **High-power LED driver**
In high-power LED drivers, the high current capability and low on-resistance of the IPD90N10S4L-06-VB help drive high-brightness LEDs, provide stable current output, and reduce power consumption and heat generation, ensuring long life and high brightness of the LEDs.
5. **Motor drive and control**
This MOSFET is also suitable for industrial motor drive and control systems, capable of handling high current loads and providing efficient current switching, suitable for motor control applications requiring high current and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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