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IPD90N06S4L-05-VB Product details
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Product Introduction:
IPD90N06S4L-05-VB is a high-performance single N-channel MOSFET with TO252 package type, designed for applications requiring high current and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for medium voltage environments, and the gate-source voltage (VGS) range is ±20V, ensuring the stability of the device. Its turn-on threshold voltage (Vth) is 3V, and it can be turned on at a lower gate voltage. IPD90N06S4L-05-VB uses Trench technology and has extremely low on-resistance of 12mΩ (@VGS=4.5V) and 4.5mΩ (@VGS=10V), respectively, and can withstand a drain current of up to 97A. This makes it very suitable for high current applications and provides excellent performance in high power applications.
IPD90N06S4L-05-VB is a high-performance single N-channel MOSFET with TO252 package type, designed for applications requiring high current and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for medium voltage environments, and the gate-source voltage (VGS) range is ±20V, ensuring the stability of the device. Its turn-on threshold voltage (Vth) is 3V, and it can be turned on at a lower gate voltage. IPD90N06S4L-05-VB uses Trench technology and has extremely low on-resistance of 12mΩ (@VGS=4.5V) and 4.5mΩ (@VGS=10V), respectively, and can withstand a drain current of up to 97A. This makes it very suitable for high current applications and provides excellent performance in high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **Drain current (ID)**: 97A
- **Technology type**: Trench
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **Drain current (ID)**: 97A
- **Technology type**: Trench
Domain and module applications：
Application areas and modules:
1. **High-efficiency power conversion**: Due to its extremely low on-resistance, the IPD90N06S4L-05-VB is ideally suited for high-efficiency power converters such as DC-DC converters and AC-DC converters. In these applications, it can provide high-efficiency power conversion, reduce power consumption, and improve the overall performance of the system.
2. **Motor drive system**: In motor drive systems that require high current, such as industrial motors and high-power motor drives, this MOSFET can effectively handle high currents, ensure stable operation of the motor, and provide smooth power transmission.
3. **Switching power supply**: Suitable for switching power supply modules, including computer power supplies and battery chargers. Its low on-resistance ensures low power consumption and high efficiency during the switching process, improving the overall performance and reliability of the power supply.
4. **Power Management**: In power management systems, such as load switches and power management circuits, the IPD90N06S4L-05-VB can effectively manage high current switching operations to ensure system stability and high performance in high power environments.
5. **Automotive Electronics**: In automotive electronic systems, such as electric power steering and battery management systems, this MOSFET can handle high current demands and provide stable and reliable switching control to ensure efficient operation of automotive electronic systems.
1. **High-efficiency power conversion**: Due to its extremely low on-resistance, the IPD90N06S4L-05-VB is ideally suited for high-efficiency power converters such as DC-DC converters and AC-DC converters. In these applications, it can provide high-efficiency power conversion, reduce power consumption, and improve the overall performance of the system.
2. **Motor drive system**: In motor drive systems that require high current, such as industrial motors and high-power motor drives, this MOSFET can effectively handle high currents, ensure stable operation of the motor, and provide smooth power transmission.
3. **Switching power supply**: Suitable for switching power supply modules, including computer power supplies and battery chargers. Its low on-resistance ensures low power consumption and high efficiency during the switching process, improving the overall performance and reliability of the power supply.
4. **Power Management**: In power management systems, such as load switches and power management circuits, the IPD90N06S4L-05-VB can effectively manage high current switching operations to ensure system stability and high performance in high power environments.
5. **Automotive Electronics**: In automotive electronic systems, such as electric power steering and battery management systems, this MOSFET can handle high current demands and provide stable and reliable switching control to ensure efficient operation of automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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