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IPD90N06S3L-07-VB Product details
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1. IPD90N06S3L-07-VB Product Introduction
IPD90N06S3L-07-VB is a high-performance N-channel power MOSFET in TO252 package. The MOSFET is designed to handle a drain-source voltage (VDS) of 60V and has a drain current (ID) handling capability of up to 97A. It uses Trench technology to provide extremely low on-resistance of 12mΩ (VGS=4.5V) and 4.5mΩ (VGS=10V), respectively, suitable for use in high-performance applications. The gate threshold voltage (Vth) is 3V, ensuring reliable switching performance at standard gate drive voltages.
IPD90N06S3L-07-VB is a high-performance N-channel power MOSFET in TO252 package. The MOSFET is designed to handle a drain-source voltage (VDS) of 60V and has a drain current (ID) handling capability of up to 97A. It uses Trench technology to provide extremely low on-resistance of 12mΩ (VGS=4.5V) and 4.5mΩ (VGS=10V), respectively, suitable for use in high-performance applications. The gate threshold voltage (Vth) is 3V, ensuring reliable switching performance at standard gate drive voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD90N06S3L-07-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **Drain current (ID)**: 97A
- **Technology**: Trench technology
- **Maximum power consumption**: Depends on the specific heat dissipation conditions, designed for effective heat dissipation requirements in high current applications
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **Drain current (ID)**: 97A
- **Technology**: Trench technology
- **Maximum power consumption**: Depends on the specific heat dissipation conditions, designed for effective heat dissipation requirements in high current applications
Domain and module applications：
3. Application fields and module examples
1. **High-efficiency DC-DC converter**
The low on-resistance and high current capability of IPD90N06S3L-07-VB make it very suitable for use in high-efficiency DC-DC converters. It can effectively reduce energy loss and improve conversion efficiency, and is suitable for power management modules, computer power supplies, and communication equipment.
2. **Motor drive system**
In motor drive applications, the high current handling capability and low on-resistance of this MOSFET make it an ideal power switch choice. Whether it is used in power tools, electric vehicles or industrial automation systems, it can provide efficient and reliable current control.
3. **Power switch and load management**
IPD90N06S3L-07-VB is suitable for a variety of power switches and load management systems. It can efficiently control load switches to ensure the stability and efficiency of the power system, especially in application scenarios requiring high current and low loss.
4. **Automotive electronic control system**
In automotive electronic control systems, this MOSFET can be used for power switches and protection circuits. Its high current handling capability and low on-resistance can meet the requirements for high efficiency and reliability in automotive electronic systems, and is suitable for automotive power modules and drive control systems.
1. **High-efficiency DC-DC converter**
The low on-resistance and high current capability of IPD90N06S3L-07-VB make it very suitable for use in high-efficiency DC-DC converters. It can effectively reduce energy loss and improve conversion efficiency, and is suitable for power management modules, computer power supplies, and communication equipment.
2. **Motor drive system**
In motor drive applications, the high current handling capability and low on-resistance of this MOSFET make it an ideal power switch choice. Whether it is used in power tools, electric vehicles or industrial automation systems, it can provide efficient and reliable current control.
3. **Power switch and load management**
IPD90N06S3L-07-VB is suitable for a variety of power switches and load management systems. It can efficiently control load switches to ensure the stability and efficiency of the power system, especially in application scenarios requiring high current and low loss.
4. **Automotive electronic control system**
In automotive electronic control systems, this MOSFET can be used for power switches and protection circuits. Its high current handling capability and low on-resistance can meet the requirements for high efficiency and reliability in automotive electronic systems, and is suitable for automotive power modules and drive control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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