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IPD90N06S3-06-VB Product details
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Product Introduction
IPD90N06S3-06-VB is a high-performance single N-channel MOSFET in a TO252 package designed for high current handling applications. It features a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, with a threshold voltage of 3V. The MOSFET has an on-resistance of 12mΩ (VGS=4.5V) and 4.5mΩ (VGS=10V), and can handle a maximum drain current of 97A. Using Trench technology, the device offers extremely low on-resistance and is suitable for power switching applications requiring high efficiency and low power consumption.
IPD90N06S3-06-VB is a high-performance single N-channel MOSFET in a TO252 package designed for high current handling applications. It features a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, with a threshold voltage of 3V. The MOSFET has an on-resistance of 12mΩ (VGS=4.5V) and 4.5mΩ (VGS=10V), and can handle a maximum drain current of 97A. Using Trench technology, the device offers extremely low on-resistance and is suitable for power switching applications requiring high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
7. **Drain current (ID)**: 97A
8. **Technology**: Trench technology
9. **Gate charge (Qg)**: Medium, suitable for fast switching applications
10. **Operating temperature range**: -55°C to 175°C
11. **Power consumption (Ptot)**: Supports high power applications with good thermal management performance
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
7. **Drain current (ID)**: 97A
8. **Technology**: Trench technology
9. **Gate charge (Qg)**: Medium, suitable for fast switching applications
10. **Operating temperature range**: -55°C to 175°C
11. **Power consumption (Ptot)**: Supports high power applications with good thermal management performance
Domain and module applications：
Applicable fields and modules
1. **Electric vehicle power management**: IPD90N06S3-06-VB performs well in power management and battery control systems for electric vehicles. Its extremely low on-resistance and high current carrying capacity enable it to efficiently control motor power and improve efficiency and reduce energy loss during battery charging and discharging.
2. **Power converter and voltage regulator module**: This MOSFET is widely used in DC-DC step-down converters, voltage regulators, and high-efficiency power management modules. Its high efficiency and low conduction loss can ensure stable operation of the system during the conversion process, reduce power loss, and improve system efficiency.
3. **Industrial automation equipment**: In the field of industrial control, IPD90N06S3-06-VB is suitable for high-power devices such as motor controllers and relay drivers. It can handle large current loads, ensuring long-term stable operation of the equipment while reducing system power consumption.
4. **Consumer Electronics**: For high-power consumer electronics such as high-power adapters, chargers, and power modules, this MOSFET can effectively handle high currents, ensuring efficient and stable operation of the device while optimizing energy consumption and thermal performance.
The high current handling capability and low on-resistance of this MOSFET make it an ideal choice for many high-performance applications, especially in power conversion and power control systems that require low losses and high efficiency.
1. **Electric vehicle power management**: IPD90N06S3-06-VB performs well in power management and battery control systems for electric vehicles. Its extremely low on-resistance and high current carrying capacity enable it to efficiently control motor power and improve efficiency and reduce energy loss during battery charging and discharging.
2. **Power converter and voltage regulator module**: This MOSFET is widely used in DC-DC step-down converters, voltage regulators, and high-efficiency power management modules. Its high efficiency and low conduction loss can ensure stable operation of the system during the conversion process, reduce power loss, and improve system efficiency.
3. **Industrial automation equipment**: In the field of industrial control, IPD90N06S3-06-VB is suitable for high-power devices such as motor controllers and relay drivers. It can handle large current loads, ensuring long-term stable operation of the equipment while reducing system power consumption.
4. **Consumer Electronics**: For high-power consumer electronics such as high-power adapters, chargers, and power modules, this MOSFET can effectively handle high currents, ensuring efficient and stable operation of the device while optimizing energy consumption and thermal performance.
The high current handling capability and low on-resistance of this MOSFET make it an ideal choice for many high-performance applications, especially in power conversion and power control systems that require low losses and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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