IPD90N04S4-03-VB Product details
Product introduction:
IPD90N04S4-03-VB is a single N-channel MOSFET in a TO252 package, designed based on advanced Trench technology, suitable for low-voltage and high-current applications. Its drain-source voltage (VDS) is 40V, capable of providing up to 120A of continuous drain current (ID), supporting efficient switching operation. The gate voltage (VGS) range is ±20V, and the gate threshold voltage (Vth) is 3V, ensuring stable turn-on characteristics. The device's on-resistance (RDS(ON)) performs well at low gate voltages, at 3mΩ @ VGS=4.5V and 1.6mΩ @ VGS=10V, making it suitable for applications requiring high efficiency and low loss.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 1.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=4.5V
- 1.6mΩ @ VGS=10V
- **Continuous drain current (ID)**: 120A
- **Technology**: Trench technology
Domain and module applications:
1. **Power tools and equipment**: The IPD90N04S4-03-VB performs well in power tools and equipment, such as electric screwdrivers, drills, and garden tools. Its high current handling capability and low on-resistance ensure efficient operation of the motor, reduce switching losses, and improve the performance and service life of the tool.
2. **Automotive electronic systems**: This MOSFET is suitable for automotive electronic applications, especially in power distribution modules and electric motor control systems. Its high current carrying capacity enables it to efficiently handle loads in automotive electrical systems, improving the reliability and power utilization of the vehicle.
3. **DC-DC converters**: In low-voltage and high-current DC-DC converters, the low on-resistance of this device significantly reduces power losses during the conversion process, making it suitable for buck converters and battery charging modules to ensure efficient energy management of the power system.
4. **Battery Management System (BMS)**: IPD90N04S4-03-VB is very suitable for high-power switching in battery management systems, improving system safety, efficiency and endurance by effectively managing the battery charging and discharging process.
The efficient switching characteristics of this MOSFET enable it to significantly improve power efficiency in many fields, especially in high-current application scenarios.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image