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IPD90N04S4-02-VB Product details
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IPD90N04S4-02-VB MOSFET Product Introduction
The IPD90N04S4-02-VB is a high-performance N-channel MOSFET in a TO252 package designed for efficient power handling. It has a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) of ±20V, and a gate threshold voltage of 3V. This MOSFET uses Trench technology to provide extremely low on-resistance (RDS(ON)), with an on-resistance of only 1.6mΩ at VGS = 10V and a maximum drain current of up to 120A. With its excellent switching performance and high current handling capability, the IPD90N04S4-02-VB is particularly suitable for applications requiring high efficiency and low power consumption, such as electric vehicles, DC-DC converters, server power supplies, and industrial control modules.
The IPD90N04S4-02-VB is a high-performance N-channel MOSFET in a TO252 package designed for efficient power handling. It has a drain-source voltage (VDS) of 40V, a gate-source voltage (VGS) of ±20V, and a gate threshold voltage of 3V. This MOSFET uses Trench technology to provide extremely low on-resistance (RDS(ON)), with an on-resistance of only 1.6mΩ at VGS = 10V and a maximum drain current of up to 120A. With its excellent switching performance and high current handling capability, the IPD90N04S4-02-VB is particularly suitable for applications requiring high efficiency and low power consumption, such as electric vehicles, DC-DC converters, server power supplies, and industrial control modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 1.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IPD90N04S4-02-VB Detailed parameter description
1. **Package type**: TO252
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 40V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 1.6mΩ @ VGS = 10V
7. **Drain current (ID)**: 120A
8. **Technology type**: Trench
9. **Power dissipation (Ptot)**: Typical value 150W
10. **Maximum pulse current (ID, pulse)**: up to 450A
11. **Input capacitance (Ciss)**: about 5000pF
12. **Gate charge (Qg)**: 120nC typical
13. **Reverse recovery time (Trr)**: 50ns typical
14. **Operating temperature range**: -55°C to 175°C
1. **Package type**: TO252
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 40V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 4.5V
- 1.6mΩ @ VGS = 10V
7. **Drain current (ID)**: 120A
8. **Technology type**: Trench
9. **Power dissipation (Ptot)**: Typical value 150W
10. **Maximum pulse current (ID, pulse)**: up to 450A
11. **Input capacitance (Ciss)**: about 5000pF
12. **Gate charge (Qg)**: 120nC typical
13. **Reverse recovery time (Trr)**: 50ns typical
14. **Operating temperature range**: -55°C to 175°C
Domain and module applications：
Applications and module examples
1. **Electric Vehicle (EV) Power Management**:
IPD90N04S4-02-VB is suitable for battery management systems (BMS) and DC-DC converters in electric vehicles. Its high current handling capability and low on-resistance can significantly reduce power consumption and improve energy efficiency, and is suitable for power management of controlling high-current motors and battery packs.
2. **Server and Data Center Power**:
In high-efficiency power management modules, especially server and data center power supplies, IPD90N04S4-02-VB can provide high-efficiency, low-loss switching performance in high-power density applications, help optimize energy management, reduce system heat generation and improve reliability.
3. **Industrial Control Systems**:
In industrial automation and control systems, this MOSFET can be used for high-power motor control, load switching, and DC-DC power conversion modules. Its high current carrying capability and fast switching performance ensure efficient operation in harsh industrial environments.
4. **Power Converter (DC-DC Converter)**:
Due to its low on-resistance and high current carrying capacity, the IPD90N04S4-02-VB is very suitable for use in high-efficiency DC-DC converters, which can effectively improve power conversion efficiency, especially in circuits that require high power and low losses.
With its efficient current handling capability and low on-resistance, the IPD90N04S4-02-VB is widely used in various modules and applications that require high power density and high efficiency.
1. **Electric Vehicle (EV) Power Management**:
IPD90N04S4-02-VB is suitable for battery management systems (BMS) and DC-DC converters in electric vehicles. Its high current handling capability and low on-resistance can significantly reduce power consumption and improve energy efficiency, and is suitable for power management of controlling high-current motors and battery packs.
2. **Server and Data Center Power**:
In high-efficiency power management modules, especially server and data center power supplies, IPD90N04S4-02-VB can provide high-efficiency, low-loss switching performance in high-power density applications, help optimize energy management, reduce system heat generation and improve reliability.
3. **Industrial Control Systems**:
In industrial automation and control systems, this MOSFET can be used for high-power motor control, load switching, and DC-DC power conversion modules. Its high current carrying capability and fast switching performance ensure efficient operation in harsh industrial environments.
4. **Power Converter (DC-DC Converter)**:
Due to its low on-resistance and high current carrying capacity, the IPD90N04S4-02-VB is very suitable for use in high-efficiency DC-DC converters, which can effectively improve power conversion efficiency, especially in circuits that require high power and low losses.
With its efficient current handling capability and low on-resistance, the IPD90N04S4-02-VB is widely used in various modules and applications that require high power density and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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