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IPD90N04S3-H4-VB Product details
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IPD90N04S3-H4-VB MOSFET Product Introduction
The IPD90N04S3-H4-VB is a high-performance N-channel MOSFET in a TO252 package for low voltage, high current applications. The device has a maximum drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, and is based on advanced Trench technology. Its on-resistance is only 5mΩ at VGS=10V, with extremely low power loss and excellent switching performance. The device can support drain currents up to 85A, making it ideal for applications with high power requirements.
The IPD90N04S3-H4-VB is a high-performance N-channel MOSFET in a TO252 package for low voltage, high current applications. The device has a maximum drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, and is based on advanced Trench technology. Its on-resistance is only 5mΩ at VGS=10V, with extremely low power loss and excellent switching performance. The device can support drain currents up to 85A, making it ideal for applications with high power requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench MOSFET technology
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS=4.5V
- 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench MOSFET technology
Domain and module applications：
Application fields and module examples
1. **DC-DC power conversion**: IPD90N04S3-H4-VB is widely used in low-voltage and high-current DC-DC converters, especially in situations where efficient power management is required. Its low on-resistance can significantly reduce power losses in power conversion, thereby improving overall conversion efficiency.
2. **Motor drive for power tools and electric vehicles**: Due to its high current capability and low on-resistance, this MOSFET is very suitable for use in motor drive circuits for power tools and electric vehicles. It can effectively control the motor and provide efficient power output while ensuring system stability and durability.
3. **Load switch and power management module**: In load switches and power management modules, the high current carrying capacity and low conduction loss of this MOSFET make it an ideal choice. Especially in power switching applications that require high efficiency and high reliability, this device can provide excellent switching performance.
4. **Battery Management System**: In a battery management system (BMS), the IPD90N04S3-H4-VB can be used to control current flow and ensure safe and efficient use of batteries. Its high current capability and low loss characteristics can improve the efficiency of the system and play an important role in extending battery life.
The high current handling capability and low on-resistance of the IPD90N04S3-H4-VB make it excel in power conversion, power tool drive, load switching, and battery management, and is particularly suitable for applications that require high efficiency and high power density.
1. **DC-DC power conversion**: IPD90N04S3-H4-VB is widely used in low-voltage and high-current DC-DC converters, especially in situations where efficient power management is required. Its low on-resistance can significantly reduce power losses in power conversion, thereby improving overall conversion efficiency.
2. **Motor drive for power tools and electric vehicles**: Due to its high current capability and low on-resistance, this MOSFET is very suitable for use in motor drive circuits for power tools and electric vehicles. It can effectively control the motor and provide efficient power output while ensuring system stability and durability.
3. **Load switch and power management module**: In load switches and power management modules, the high current carrying capacity and low conduction loss of this MOSFET make it an ideal choice. Especially in power switching applications that require high efficiency and high reliability, this device can provide excellent switching performance.
4. **Battery Management System**: In a battery management system (BMS), the IPD90N04S3-H4-VB can be used to control current flow and ensure safe and efficient use of batteries. Its high current capability and low loss characteristics can improve the efficiency of the system and play an important role in extending battery life.
The high current handling capability and low on-resistance of the IPD90N04S3-H4-VB make it excel in power conversion, power tool drive, load switching, and battery management, and is particularly suitable for applications that require high efficiency and high power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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