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IPD85P04P4L-06-VB Product details
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1. IPD85P04P4L-06-VB Product Introduction
IPD85P04P4L-06-VB is a high-performance single P-channel MOSFET in TO252 package, suitable for power management applications requiring low on-resistance and high current handling capability. This MOSFET has a maximum drain-source voltage of -40V and can carry a current of up to -90A. Its gate-source voltage range is ±20V and the gate threshold voltage is -2V. The on-resistance is as low as 6.8mΩ (at VGS=-10V), and it uses advanced Trench technology to ensure its excellent performance in high-efficiency applications. This product is particularly suitable for occasions requiring fast switching and low power consumption.
IPD85P04P4L-06-VB is a high-performance single P-channel MOSFET in TO252 package, suitable for power management applications requiring low on-resistance and high current handling capability. This MOSFET has a maximum drain-source voltage of -40V and can carry a current of up to -90A. Its gate-source voltage range is ±20V and the gate threshold voltage is -2V. The on-resistance is as low as 6.8mΩ (at VGS=-10V), and it uses advanced Trench technology to ensure its excellent performance in high-efficiency applications. This product is particularly suitable for occasions requiring fast switching and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | 6.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. IPD85P04P4L-06-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 13mΩ@VGS=-4.5V
- 6.8mΩ@VGS=-10V
- **Drain current (ID)**: -90A
- **Technology**: Trench (trench technology)
- **Other features**: Low on-resistance, fast switching speed, low gate charge, suitable for high frequency and high power applications.
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 13mΩ@VGS=-4.5V
- 6.8mΩ@VGS=-10V
- **Drain current (ID)**: -90A
- **Technology**: Trench (trench technology)
- **Other features**: Low on-resistance, fast switching speed, low gate charge, suitable for high frequency and high power applications.
Domain and module applications：
III. Application fields and module examples of IPD85P04P4L-06-VB
1. **Battery Management System (BMS)**: Due to its low on-resistance and high current capability, IPD85P04P4L-06-VB is suitable for use in battery management systems to achieve efficient battery switching and charge and discharge control. This helps to improve the efficiency of the battery system and extend the life of the battery.
2. **Electric Vehicle Inverter and Motor Control**: In the inverter and motor drive system of electric vehicles, this P-channel MOSFET is used to handle the power switching of electric vehicles. Its high current handling capability ensures the reliability and high efficiency of the system and is suitable for high current power conversion.
3. **DC Power Switching and Protection Circuit**: This MOSFET can be used in DC power switching and protection circuits. With its excellent current carrying capacity, it can be effectively used to control high current switching loads and provide overcurrent and overvoltage protection in power management modules.
4. **Industrial Control and Automation Equipment**: IPD85P04P4L-06-VB can be used as an efficient switching element in industrial automation equipment, especially in equipment that requires high power and fast response, such as industrial power supplies and automatic control systems. Its low power consumption and high switching speed contribute to the efficient operation of the equipment.
This MOSFET is suitable for a variety of fields, especially in power management and switching applications that require high current and high efficiency, and performs well.
1. **Battery Management System (BMS)**: Due to its low on-resistance and high current capability, IPD85P04P4L-06-VB is suitable for use in battery management systems to achieve efficient battery switching and charge and discharge control. This helps to improve the efficiency of the battery system and extend the life of the battery.
2. **Electric Vehicle Inverter and Motor Control**: In the inverter and motor drive system of electric vehicles, this P-channel MOSFET is used to handle the power switching of electric vehicles. Its high current handling capability ensures the reliability and high efficiency of the system and is suitable for high current power conversion.
3. **DC Power Switching and Protection Circuit**: This MOSFET can be used in DC power switching and protection circuits. With its excellent current carrying capacity, it can be effectively used to control high current switching loads and provide overcurrent and overvoltage protection in power management modules.
4. **Industrial Control and Automation Equipment**: IPD85P04P4L-06-VB can be used as an efficient switching element in industrial automation equipment, especially in equipment that requires high power and fast response, such as industrial power supplies and automatic control systems. Its low power consumption and high switching speed contribute to the efficient operation of the equipment.
This MOSFET is suitable for a variety of fields, especially in power management and switching applications that require high current and high efficiency, and performs well.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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