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IPD85P04P4-07-VB Product details
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1. IPD85P04P4-07-VB Product Introduction
IPD85P04P4-07-VB is a high-performance P-channel MOSFET in TO252 package, suitable for switching and control applications in medium and low voltage circuits. Its maximum drain-source voltage is -40V, maximum drain current is -90A, and on-resistance is as low as 6.8mΩ (@VGS=-10V), enabling it to provide excellent switching performance in high current loads. IPD85P04P4-07-VB uses advanced Trench technology to improve conduction efficiency and switching speed, and is suitable for a variety of high-efficiency power management and load control applications.
IPD85P04P4-07-VB is a high-performance P-channel MOSFET in TO252 package, suitable for switching and control applications in medium and low voltage circuits. Its maximum drain-source voltage is -40V, maximum drain current is -90A, and on-resistance is as low as 6.8mΩ (@VGS=-10V), enabling it to provide excellent switching performance in high current loads. IPD85P04P4-07-VB uses advanced Trench technology to improve conduction efficiency and switching speed, and is suitable for a variety of high-efficiency power management and load control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | 6.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. IPD85P04P4-07-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Unipolar P-channel
- **Drain-source breakdown voltage (VDS)**: -40V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=-4.5V
- 6.8mΩ @ VGS=-10V
- **Maximum drain current (ID)**: -90A
- **Technology**: Trench (trench technology)
- **Package type**: TO252
- **Channel configuration**: Unipolar P-channel
- **Drain-source breakdown voltage (VDS)**: -40V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=-4.5V
- 6.8mΩ @ VGS=-10V
- **Maximum drain current (ID)**: -90A
- **Technology**: Trench (trench technology)
Domain and module applications：
III. Application fields and module examples
1. **Battery management system**:
The P-channel characteristics of IPD85P04P4-07-VB make it very suitable for use in battery management systems, especially in lithium battery protection circuits. Due to its low on-resistance, it can effectively control the current flow under high current conditions and protect the battery from damage due to over-discharge or short circuit.
2. **Power reverse protection circuit**:
Since P-channel MOSFET can operate at negative voltage, IPD85P04P4-07-VB can be used in power reverse protection circuits. When the power polarity is wrong, it can effectively block the reverse current flow and protect the power supply device from damage.
3. **Load switch application**:
In load switch applications that require low loss and high efficiency, IPD85P04P4-07-VB is an ideal choice. Its high current capability and low on-resistance are suitable for use in high-power switching circuits, such as load switch control in power tools or electric vehicles.
4. **DC-DC Converter**:
In the DC-DC converter, IPD85P04P4-07-VB can efficiently control the conversion of voltage and current to ensure efficient use of electrical energy. It can be used as the main switch or synchronous rectifier in the buck or boost converter to improve system efficiency.
1. **Battery management system**:
The P-channel characteristics of IPD85P04P4-07-VB make it very suitable for use in battery management systems, especially in lithium battery protection circuits. Due to its low on-resistance, it can effectively control the current flow under high current conditions and protect the battery from damage due to over-discharge or short circuit.
2. **Power reverse protection circuit**:
Since P-channel MOSFET can operate at negative voltage, IPD85P04P4-07-VB can be used in power reverse protection circuits. When the power polarity is wrong, it can effectively block the reverse current flow and protect the power supply device from damage.
3. **Load switch application**:
In load switch applications that require low loss and high efficiency, IPD85P04P4-07-VB is an ideal choice. Its high current capability and low on-resistance are suitable for use in high-power switching circuits, such as load switch control in power tools or electric vehicles.
4. **DC-DC Converter**:
In the DC-DC converter, IPD85P04P4-07-VB can efficiently control the conversion of voltage and current to ensure efficient use of electrical energy. It can be used as the main switch or synchronous rectifier in the buck or boost converter to improve system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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