IPD80R1K4CE-VB Product details
Product introduction:
IPD80R1K4CE-VB is a high voltage single N-channel power MOSFET in TO252 package, designed for harsh high voltage environments. With 800V drain-source withstand voltage and 7A drain current capability, the device is manufactured using SJ_Multi-EPI (polysilicon technology) to provide reliable switching performance. With an on-resistance of 770mΩ @ VGS=10V, it is suitable for a variety of power conversion and switching circuits that require high voltage tolerance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 770mΩ @ VGS=10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI (polysilicon technology)
- **Thermal performance**: Excellent heat dissipation management capability, suitable for high power density application scenarios
Domain and module applications:
1. **Industrial power converters**
The 800V high withstand voltage performance of IPD80R1K4CE-VB makes it very suitable for high-voltage application scenarios such as industrial power converters. It can effectively handle high-voltage switching and conversion tasks in power systems to ensure efficient and stable power output.
2. **Photovoltaic power inverters**
This MOSFET can handle high DC input voltages in photovoltaic inverter applications and is suitable for high-power photovoltaic systems. Its high-voltage characteristics ensure safe and reliable operation during solar energy conversion, reduce losses and improve system efficiency.
3. **Electric vehicle charging infrastructure**
In electric vehicle charging stations, IPD80R1K4CE-VB can withstand high voltage inputs and is particularly suitable for high-voltage charging modules in fast charging equipment, ensuring charging safety and reliability while improving energy transmission efficiency.
4. **High-voltage switching circuits**
This device is widely used in applications that require high-voltage switching, such as industrial automation systems, industrial lighting control, and high-voltage power transmission, to help achieve efficient power management and control.
5. **Lighting systems**
Due to its high withstand voltage characteristics, the IPD80R1K4CE-VB is also very suitable for drive circuits and dimming control systems in LED lighting systems, ensuring long-term stable performance, especially in the field of high-voltage commercial lighting.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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