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IPD80R1K0CE-VB Product details
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Product Introduction:
IPD80R1K0CE-VB is a high voltage single N-channel MOSFET in TO252 package with 800V drain-source voltage (VDS), suitable for high voltage environment. It can withstand ±30V gate-source voltage (VGS) and has a turn-on threshold voltage (Vth) of 3.5V, ensuring a lower gate voltage required for conduction. The on-resistance of this MOSFET is 1100mΩ (@VGS=10V) and the maximum drain current (ID) is 5A. IPD80R1K0CE-VB adopts SJ_Multi-EPI (super junction multilayer epitaxy) technology to enhance its high voltage handling capability and excel in applications requiring high voltage resistance and low leakage current.
IPD80R1K0CE-VB is a high voltage single N-channel MOSFET in TO252 package with 800V drain-source voltage (VDS), suitable for high voltage environment. It can withstand ±30V gate-source voltage (VGS) and has a turn-on threshold voltage (Vth) of 3.5V, ensuring a lower gate voltage required for conduction. The on-resistance of this MOSFET is 1100mΩ (@VGS=10V) and the maximum drain current (ID) is 5A. IPD80R1K0CE-VB adopts SJ_Multi-EPI (super junction multilayer epitaxy) technology to enhance its high voltage handling capability and excel in applications requiring high voltage resistance and low leakage current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI (super junction multilayer epitaxy)
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS=10V
- **Drain current (ID)**: 5A
- **Technology type**: SJ_Multi-EPI (super junction multilayer epitaxy)
Domain and module applications：
Application fields and modules:
1. **High-voltage power conversion**: Since the IPD80R1K0CE-VB has a high drain-source voltage of 800V, it is very suitable for high-voltage power converters such as AC-DC and DC-DC converters. In these applications, it can perform effective power conversion in high-voltage environments to ensure the stability and safety of the equipment.
2. **Lighting control system**: In high-voltage LED lighting systems, this MOSFET can control the stable output of current and voltage to ensure the stability and high efficiency of lighting equipment under long-term use.
3. **Power switch and protection circuit**: In the switch module and overvoltage protection circuit in the power transmission system, the IPD80R1K0CE-VB can manage the operation of high-voltage switches and protect the circuit from overvoltage damage. It is suitable for large-scale industrial power management systems.
4. **Inverter application**: Suitable for inverters such as those in solar and wind energy systems. Its high-voltage processing capability can support the conversion of high-voltage DC to AC, ensuring the effective operation of the system and efficient conversion of energy.
5. **Industrial Control and Drive**: In industrial automation control systems, this MOSFET can work stably in applications requiring high-voltage switching, such as motor drive and load management, providing efficient control and safe operation.
1. **High-voltage power conversion**: Since the IPD80R1K0CE-VB has a high drain-source voltage of 800V, it is very suitable for high-voltage power converters such as AC-DC and DC-DC converters. In these applications, it can perform effective power conversion in high-voltage environments to ensure the stability and safety of the equipment.
2. **Lighting control system**: In high-voltage LED lighting systems, this MOSFET can control the stable output of current and voltage to ensure the stability and high efficiency of lighting equipment under long-term use.
3. **Power switch and protection circuit**: In the switch module and overvoltage protection circuit in the power transmission system, the IPD80R1K0CE-VB can manage the operation of high-voltage switches and protect the circuit from overvoltage damage. It is suitable for large-scale industrial power management systems.
4. **Inverter application**: Suitable for inverters such as those in solar and wind energy systems. Its high-voltage processing capability can support the conversion of high-voltage DC to AC, ensuring the effective operation of the system and efficient conversion of energy.
5. **Industrial Control and Drive**: In industrial automation control systems, this MOSFET can work stably in applications requiring high-voltage switching, such as motor drive and load management, providing efficient control and safe operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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