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IPD80N06S3-09-VB Product details
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1. IPD80N06S3-09-VB Product Introduction
IPD80N06S3-09-VB is an N-channel power MOSFET in TO252 package with 60V drain-source voltage (VDS) and 58A drain current (ID) handling capability. This MOSFET adopts Trench technology to provide low on-resistance (RDS(ON)) and is suitable for use in high-performance applications. Its gate threshold voltage (Vth) is 2.5V, which can achieve reliable turn-on and turn-off operation at relatively low gate drive voltage. Its on-resistance is 13mΩ at VGS=4.5V and 10mΩ at VGS=10V.
IPD80N06S3-09-VB is an N-channel power MOSFET in TO252 package with 60V drain-source voltage (VDS) and 58A drain current (ID) handling capability. This MOSFET adopts Trench technology to provide low on-resistance (RDS(ON)) and is suitable for use in high-performance applications. Its gate threshold voltage (Vth) is 2.5V, which can achieve reliable turn-on and turn-off operation at relatively low gate drive voltage. Its on-resistance is 13mΩ at VGS=4.5V and 10mΩ at VGS=10V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD80N06S3-09-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Drain current (ID)**: 58A
- **Technology**: Trench technology
- **Maximum power consumption**: Depends on the specific heat dissipation conditions, usually used for effective heat dissipation design in high current applications
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
- **Drain current (ID)**: 58A
- **Technology**: Trench technology
- **Maximum power consumption**: Depends on the specific heat dissipation conditions, usually used for effective heat dissipation design in high current applications
Domain and module applications：
III. Application fields and module examples
1. **Automotive Electronic Control Unit (ECU)**
The high current handling capability and low on-resistance of IPD80N06S3-09-VB make it very suitable for use in power switches, relay drivers and other ECU components in automotive electronic systems, which can effectively improve system efficiency and reduce power consumption.
2. **DC-DC Converter**
In DC-DC converters in the medium voltage range, this MOSFET can be used as a power switch to ensure that the converter has lower losses and improves efficiency. Its 60V drain-source voltage is very suitable for these medium voltage applications.
3. **Motor Control**
In applications that need to control medium and low voltage motors, IPD80N06S3-09-VB can be used as a power switch in motor drivers, providing efficient current control and fast switching performance, suitable for electric vehicles, industrial automation and other fields.
4. **Load Switch and Power Management**
This MOSFET can also be used in load switches and power management modules, especially in systems with low conduction losses and high current requirements, such as power modules for consumer electronics and communication equipment.
1. **Automotive Electronic Control Unit (ECU)**
The high current handling capability and low on-resistance of IPD80N06S3-09-VB make it very suitable for use in power switches, relay drivers and other ECU components in automotive electronic systems, which can effectively improve system efficiency and reduce power consumption.
2. **DC-DC Converter**
In DC-DC converters in the medium voltage range, this MOSFET can be used as a power switch to ensure that the converter has lower losses and improves efficiency. Its 60V drain-source voltage is very suitable for these medium voltage applications.
3. **Motor Control**
In applications that need to control medium and low voltage motors, IPD80N06S3-09-VB can be used as a power switch in motor drivers, providing efficient current control and fast switching performance, suitable for electric vehicles, industrial automation and other fields.
4. **Load Switch and Power Management**
This MOSFET can also be used in load switches and power management modules, especially in systems with low conduction losses and high current requirements, such as power modules for consumer electronics and communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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