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IPD800N06N G-VB Product details
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Product Introduction
IPD800N06N G-VB is a high-performance single N-channel MOSFET packaged in TO252. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) of this MOSFET is 30mΩ (VGS=4.5V) and 25mΩ (VGS=10V), and the maximum drain current (ID) reaches 45A. Using advanced Trench technology, IPD800N06N G-VB provides excellent switching performance and low power consumption, and is suitable for high-efficiency power switching applications.
IPD800N06N G-VB is a high-performance single N-channel MOSFET packaged in TO252. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. The on-resistance (RDS(ON)) of this MOSFET is 30mΩ (VGS=4.5V) and 25mΩ (VGS=10V), and the maximum drain current (ID) reaches 45A. Using advanced Trench technology, IPD800N06N G-VB provides excellent switching performance and low power consumption, and is suitable for high-efficiency power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 25mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=4.5V
- 25mΩ @ VGS=10V
7. **Drain current (ID)**: 45A
8. **Technology**: Trench technology
9. **Gate charge (Qg)**: Moderate, suitable for high-efficiency switching applications
10. **Operating temperature range**: -55°C to 175°C
11. **Power consumption (Ptot)**: Suitable for high power applications with good heat dissipation performance
1. **Package type**: TO252
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 30mΩ @ VGS=4.5V
- 25mΩ @ VGS=10V
7. **Drain current (ID)**: 45A
8. **Technology**: Trench technology
9. **Gate charge (Qg)**: Moderate, suitable for high-efficiency switching applications
10. **Operating temperature range**: -55°C to 175°C
11. **Power consumption (Ptot)**: Suitable for high power applications with good heat dissipation performance
Domain and module applications：
Applicable fields and modules
1. **Power management system**: IPD800N06N G-VB performs well in switch mode power supplies (SMPS) and buck converters. Its low on-resistance and high current handling capability enable it to effectively reduce power consumption and improve conversion efficiency in power management, and is particularly suitable for power modules that require high efficiency and stability.
2. **Industrial automation**: In industrial automation equipment, such as motor drives and high-power relays, IPD800N06N G-VB is able to provide stable switching performance and high current carrying capacity. This is especially important for high-current switching applications in industrial control and automation systems, ensuring the reliability and long life of the equipment.
3. **Automotive electronics**: In automotive electronic systems, such as power management and battery management systems for electric vehicles, this MOSFET is suitable for use as a high-efficiency power switch. Its low on-resistance and high current handling capability help improve the overall efficiency and safety of electric vehicle systems, especially in battery management and motor control.
4. **Consumer electronics**: In consumer electronics products, such as high-power power adapters and chargers, the IPD800N06N G-VB can effectively handle high current loads and provide stable switching performance. Its high current carrying capacity and low power consumption characteristics help improve the efficiency and service life of the device, and is suitable for high-efficiency power modules and switching applications.
1. **Power management system**: IPD800N06N G-VB performs well in switch mode power supplies (SMPS) and buck converters. Its low on-resistance and high current handling capability enable it to effectively reduce power consumption and improve conversion efficiency in power management, and is particularly suitable for power modules that require high efficiency and stability.
2. **Industrial automation**: In industrial automation equipment, such as motor drives and high-power relays, IPD800N06N G-VB is able to provide stable switching performance and high current carrying capacity. This is especially important for high-current switching applications in industrial control and automation systems, ensuring the reliability and long life of the equipment.
3. **Automotive electronics**: In automotive electronic systems, such as power management and battery management systems for electric vehicles, this MOSFET is suitable for use as a high-efficiency power switch. Its low on-resistance and high current handling capability help improve the overall efficiency and safety of electric vehicle systems, especially in battery management and motor control.
4. **Consumer electronics**: In consumer electronics products, such as high-power power adapters and chargers, the IPD800N06N G-VB can effectively handle high current loads and provide stable switching performance. Its high current carrying capacity and low power consumption characteristics help improve the efficiency and service life of the device, and is suitable for high-efficiency power modules and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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