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IPD70P04P4L-08-VB Product details
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Product Introduction:
IPD70P04P4L-08-VB is a single P-channel MOSFET in TO252 package. This MOSFET adopts Trench trench technology and is designed for negative voltage applications. Its drain-source voltage (VDS) is -40V and has a continuous drain current (ID) of up to -90A, suitable for high-power loads. Its gate threshold voltage (Vth) is -2V, ensuring reliable switching operation at lower gate voltages. Although its on-resistance (RDS(ON)) varies at different gate voltages, it is 13mΩ @ VGS=4.5V and 6.8mΩ @ VGS=10V, respectively, which makes it perform well in switching applications and is suitable for a variety of high-efficiency power supplies and load control systems.
IPD70P04P4L-08-VB is a single P-channel MOSFET in TO252 package. This MOSFET adopts Trench trench technology and is designed for negative voltage applications. Its drain-source voltage (VDS) is -40V and has a continuous drain current (ID) of up to -90A, suitable for high-power loads. Its gate threshold voltage (Vth) is -2V, ensuring reliable switching operation at lower gate voltages. Although its on-resistance (RDS(ON)) varies at different gate voltages, it is 13mΩ @ VGS=4.5V and 6.8mΩ @ VGS=10V, respectively, which makes it perform well in switching applications and is suitable for a variety of high-efficiency power supplies and load control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | 6.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description:
- **Package type**: TO252
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -40V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**: 13mΩ @ VGS=4.5V, 6.8mΩ @ VGS=10V
- **Continuous drain current (ID)**: -90A
- **Technology**: Trench technology
- **Package type**: TO252
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -40V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**: 13mΩ @ VGS=4.5V, 6.8mΩ @ VGS=10V
- **Continuous drain current (ID)**: -90A
- **Technology**: Trench technology
Domain and module applications：
Application areas and module examples:
1. **Power management**: In power management modules, the high current and low on-resistance characteristics of IPD70P04P4L-08-VB make it very suitable for power switching and load regulation, which can effectively manage and control the flow of power and improve the efficiency and stability of the system.
2. **DC-DC converter**: As a switching element in a DC-DC converter, this MOSFET is capable of handling high-power loads, and its low RDS(ON) performance ensures efficient energy conversion, making it suitable for buck or boost converters to optimize power performance.
3. **Motor drive**: In motor drive applications, the high current capability of IPD70P04P4L-08-VB makes it suitable for H-bridge circuits and motor control modules, which can stably drive high-power motors and is suitable for power tools, home appliances, and automotive motor control systems.
4. **Load Switch**: In high power load switching applications, this MOSFET can provide efficient switching control, such as controlling the charging and discharging process in battery management systems, ensuring safe and efficient operation.
1. **Power management**: In power management modules, the high current and low on-resistance characteristics of IPD70P04P4L-08-VB make it very suitable for power switching and load regulation, which can effectively manage and control the flow of power and improve the efficiency and stability of the system.
2. **DC-DC converter**: As a switching element in a DC-DC converter, this MOSFET is capable of handling high-power loads, and its low RDS(ON) performance ensures efficient energy conversion, making it suitable for buck or boost converters to optimize power performance.
3. **Motor drive**: In motor drive applications, the high current capability of IPD70P04P4L-08-VB makes it suitable for H-bridge circuits and motor control modules, which can stably drive high-power motors and is suitable for power tools, home appliances, and automotive motor control systems.
4. **Load Switch**: In high power load switching applications, this MOSFET can provide efficient switching control, such as controlling the charging and discharging process in battery management systems, ensuring safe and efficient operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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