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IPD70P04P4-09-VB Product details
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IPD70P04P4-09-VB MOSFET Product Introduction
The IPD70P04P4-09-VB is a high-performance P-channel MOSFET in a TO252 package. It can withstand drain-source voltages (VDS) up to -40V and supports gate-source voltages (VGS) of ±20V, making it suitable for applications in low-voltage environments. The MOSFET has a gate threshold voltage of -2V and uses advanced Trench technology to provide excellent switching characteristics and low on-resistance. The on-resistance (RDS(ON)) of the IPD70P04P4-09-VB is 6.8mΩ at VGS = 10V and 13mΩ at VGS = 4.5V, and it can carry drain currents up to -90A. These features make the IPD70P04P4-09-VB an excellent performer in high-power and high-efficiency applications.
The IPD70P04P4-09-VB is a high-performance P-channel MOSFET in a TO252 package. It can withstand drain-source voltages (VDS) up to -40V and supports gate-source voltages (VGS) of ±20V, making it suitable for applications in low-voltage environments. The MOSFET has a gate threshold voltage of -2V and uses advanced Trench technology to provide excellent switching characteristics and low on-resistance. The on-resistance (RDS(ON)) of the IPD70P04P4-09-VB is 6.8mΩ at VGS = 10V and 13mΩ at VGS = 4.5V, and it can carry drain currents up to -90A. These features make the IPD70P04P4-09-VB an excellent performer in high-power and high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | 6.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -40V | -2V | -90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
IPD70P04P4-09-VB Detailed parameter description
1. **Package type**: TO252
2. **Polarity**: P-channel
3. **Drain-source voltage (VDS)**: -40V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: -2V
6. **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 6.8mΩ @ VGS = 10V
7. **Drain current (ID)**: -90A
8. **Technology type**: Trench
9. **Operating temperature range**: -55°C to 175°C
10. **Power dissipation (Ptot)**: typically 100W
11. **Maximum pulse current (ID, pulse)**: up to -150A
12. **Input capacitance (Ciss)**: about 2800pF
13. **Reverse recovery time (Trr)**: typically about 60ns
14. **Gate charge (Qg)**: typically 50nC
1. **Package type**: TO252
2. **Polarity**: P-channel
3. **Drain-source voltage (VDS)**: -40V
4. **Gate-source voltage (VGS)**: ±20V
5. **Gate threshold voltage (Vth)**: -2V
6. **On-resistance (RDS(ON))**:
- 13mΩ @ VGS = 4.5V
- 6.8mΩ @ VGS = 10V
7. **Drain current (ID)**: -90A
8. **Technology type**: Trench
9. **Operating temperature range**: -55°C to 175°C
10. **Power dissipation (Ptot)**: typically 100W
11. **Maximum pulse current (ID, pulse)**: up to -150A
12. **Input capacitance (Ciss)**: about 2800pF
13. **Reverse recovery time (Trr)**: typically about 60ns
14. **Gate charge (Qg)**: typically 50nC
Domain and module applications：
Applications and Module Examples
1. **DC-DC Converter**:
IPD70P04P4-09-VB performs well in DC-DC converters, especially in applications that require efficient switching control. Its low on-resistance and high current handling capability can improve the efficiency and stability of the converter, and is suitable for high current and high power power conversion tasks.
2. **Battery Management System (BMS)**:
In the battery management system, this MOSFET can be used for battery switching and protection circuits. Its high current handling capability and low on-resistance help reduce power consumption and improve system efficiency and reliability.
3. **Electric Vehicle (EV) Load Switch**:
In electric vehicle systems, IPD70P04P4-09-VB can be used for high power load switch control. Its excellent current carrying capability and low on-resistance enable it to effectively control the switching of motors and other high power components, improving the performance and efficiency of the overall system.
4. **Power Management Module**:
In various power management modules, such as power management ICs and motor control systems, the high current handling capability and low on-resistance of IPD70P04P4-09-VB can ensure stable operation of the system under high load conditions and optimize power loss.
As a high-performance P-channel MOSFET, IPD70P04P4-09-VB is suitable for a variety of high-power and high-efficiency application scenarios with its low on-resistance and high current capability, providing a reliable and efficient power management solution.
1. **DC-DC Converter**:
IPD70P04P4-09-VB performs well in DC-DC converters, especially in applications that require efficient switching control. Its low on-resistance and high current handling capability can improve the efficiency and stability of the converter, and is suitable for high current and high power power conversion tasks.
2. **Battery Management System (BMS)**:
In the battery management system, this MOSFET can be used for battery switching and protection circuits. Its high current handling capability and low on-resistance help reduce power consumption and improve system efficiency and reliability.
3. **Electric Vehicle (EV) Load Switch**:
In electric vehicle systems, IPD70P04P4-09-VB can be used for high power load switch control. Its excellent current carrying capability and low on-resistance enable it to effectively control the switching of motors and other high power components, improving the performance and efficiency of the overall system.
4. **Power Management Module**:
In various power management modules, such as power management ICs and motor control systems, the high current handling capability and low on-resistance of IPD70P04P4-09-VB can ensure stable operation of the system under high load conditions and optimize power loss.
As a high-performance P-channel MOSFET, IPD70P04P4-09-VB is suitable for a variety of high-power and high-efficiency application scenarios with its low on-resistance and high current capability, providing a reliable and efficient power management solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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