中文
English
IPD70N10S3L-12-VB Product details
Back to previous pageProduct introduction：
IPD70N10S3L-12-VB MOSFET Product Introduction
IPD70N10S3L-12-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current applications. It supports drain-source voltage (VDS) up to 100V and gate-source voltage (VGS) of ±20V, and uses advanced trench technology (Trench Technology). Its on-resistance is only 8.5mΩ at VGS=10V, providing extremely low power consumption and excellent switching performance. This makes IPD70N10S3L-12-VB an ideal choice for applications that require high current and high efficiency.
IPD70N10S3L-12-VB is a high-performance N-channel MOSFET in TO252 package, designed for high current applications. It supports drain-source voltage (VDS) up to 100V and gate-source voltage (VGS) of ±20V, and uses advanced trench technology (Trench Technology). Its on-resistance is only 8.5mΩ at VGS=10V, providing extremely low power consumption and excellent switching performance. This makes IPD70N10S3L-12-VB an ideal choice for applications that require high current and high efficiency.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | 8.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10.5mΩ @ VGS=4.5V
- 8.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench MOSFET (Trench Technology)
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10.5mΩ @ VGS=4.5V
- 8.5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench MOSFET (Trench Technology)
Domain and module applications：
Applications and module examples
1. **High-efficiency power conversion**: IPD70N10S3L-12-VB excels in power converters, especially where high current and low power consumption are required. Its low on-resistance and high current carrying capacity make it an ideal choice for DC-DC converters and high-efficiency power modules, providing higher energy efficiency and reliability.
2. **Electric vehicle drive system**: In the drive system of electric vehicles, this MOSFET can handle high current applications such as motor drive. Its high rated current capability and low on-resistance can effectively improve the performance and efficiency of electric vehicle systems, especially for motor control and battery management systems.
3. **Power switching devices**: For applications in power switching devices, such as high-power power switches and load switches, IPD70N10S3L-12-VB can provide stable switching performance and low-power operation. Its high current carrying capacity ensures stability under high current loads.
4. **Industrial Control Systems**: In industrial control systems, such as motor drives and heater controls, this MOSFET provides high current and low power consumption, making it suitable for industrial applications that require high efficiency and high reliability. Its low on-resistance ensures high efficiency and low heat loss during long-term operation.
The low on-resistance and high current handling capability of the IPD70N10S3L-12-VB enable it to excel in high current and high efficiency applications, making it suitable for power management, electric vehicle drives, power switches, and industrial control systems.
1. **High-efficiency power conversion**: IPD70N10S3L-12-VB excels in power converters, especially where high current and low power consumption are required. Its low on-resistance and high current carrying capacity make it an ideal choice for DC-DC converters and high-efficiency power modules, providing higher energy efficiency and reliability.
2. **Electric vehicle drive system**: In the drive system of electric vehicles, this MOSFET can handle high current applications such as motor drive. Its high rated current capability and low on-resistance can effectively improve the performance and efficiency of electric vehicle systems, especially for motor control and battery management systems.
3. **Power switching devices**: For applications in power switching devices, such as high-power power switches and load switches, IPD70N10S3L-12-VB can provide stable switching performance and low-power operation. Its high current carrying capacity ensures stability under high current loads.
4. **Industrial Control Systems**: In industrial control systems, such as motor drives and heater controls, this MOSFET provides high current and low power consumption, making it suitable for industrial applications that require high efficiency and high reliability. Its low on-resistance ensures high efficiency and low heat loss during long-term operation.
The low on-resistance and high current handling capability of the IPD70N10S3L-12-VB enable it to excel in high current and high efficiency applications, making it suitable for power management, electric vehicle drives, power switches, and industrial control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
