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IPD70N04S3-07-VB Product details
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1. IPD70N04S3-07-VB Product Introduction
IPD70N04S3-07-VB is a high-performance single N-channel MOSFET in TO252 package. Designed for high-efficiency power management and switching applications, this MOSFET has a maximum drain-source voltage of 40V and a high current carrying capacity of 85A. Its gate-source voltage range is ±20V, the gate threshold voltage is 2.5V, and the on-resistance is as low as 5mΩ (at VGS=10V). Using Trench technology, this MOSFET excels in switching speed and conductivity, and is very suitable for applications requiring high performance and low power consumption.
IPD70N04S3-07-VB is a high-performance single N-channel MOSFET in TO252 package. Designed for high-efficiency power management and switching applications, this MOSFET has a maximum drain-source voltage of 40V and a high current carrying capacity of 85A. Its gate-source voltage range is ±20V, the gate threshold voltage is 2.5V, and the on-resistance is as low as 5mΩ (at VGS=10V). Using Trench technology, this MOSFET excels in switching speed and conductivity, and is very suitable for applications requiring high performance and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD70N04S3-07-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ@VGS=4.5V
- 5mΩ@VGS=10V
- **Drain current (ID)**: 85A
- **Technology**: Trench (trench technology)
- **Other features**: Low on-resistance, fast switching capability, low gate charge, suitable for high frequency and high power applications.
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ@VGS=4.5V
- 5mΩ@VGS=10V
- **Drain current (ID)**: 85A
- **Technology**: Trench (trench technology)
- **Other features**: Low on-resistance, fast switching capability, low gate charge, suitable for high frequency and high power applications.
Domain and module applications：
3. Application fields and module examples of IPD70N04S3-07-VB
1. **Power switches and DC-DC converters**: IPD70N04S3-07-VB is very suitable for power switches and DC-DC converters due to its low on-resistance and high current carrying capacity. It can effectively manage high current loads in the power supply, improve power conversion efficiency and reduce energy loss.
2. **Electric vehicle drive system**: In the motor drive system of electric vehicles, the high current capability and low on-resistance of this MOSFET make it an ideal choice. It can handle the high power requirements in electric vehicle motors and improve the overall efficiency and performance of the system.
3. **High-power LED drive**: This MOSFET is also widely used in high-power LED lighting systems. Due to its low on-resistance and fast switching characteristics, it can effectively control the power output and brightness of the LED, ensure stable lighting effects and improve energy efficiency.
4. **Industrial Automation Equipment**: In industrial automation equipment, IPD70N04S3-07-VB can be used as a power switch and load control. Its high current carrying capacity and low power consumption make it suitable for power management in various industrial applications, ensuring efficient and stable operation of equipment.
These applications give full play to the high efficiency and high switching performance of IPD70N04S3-07-VB, making it perform well in high-power and high-efficiency occasions.
1. **Power switches and DC-DC converters**: IPD70N04S3-07-VB is very suitable for power switches and DC-DC converters due to its low on-resistance and high current carrying capacity. It can effectively manage high current loads in the power supply, improve power conversion efficiency and reduce energy loss.
2. **Electric vehicle drive system**: In the motor drive system of electric vehicles, the high current capability and low on-resistance of this MOSFET make it an ideal choice. It can handle the high power requirements in electric vehicle motors and improve the overall efficiency and performance of the system.
3. **High-power LED drive**: This MOSFET is also widely used in high-power LED lighting systems. Due to its low on-resistance and fast switching characteristics, it can effectively control the power output and brightness of the LED, ensure stable lighting effects and improve energy efficiency.
4. **Industrial Automation Equipment**: In industrial automation equipment, IPD70N04S3-07-VB can be used as a power switch and load control. Its high current carrying capacity and low power consumption make it suitable for power management in various industrial applications, ensuring efficient and stable operation of equipment.
These applications give full play to the high efficiency and high switching performance of IPD70N04S3-07-VB, making it perform well in high-power and high-efficiency occasions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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