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IPD65R950CFD-VB Product details
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1. IPD65R950CFD-VB Product Introduction
IPD65R950CFD-VB is a high voltage N-channel MOSFET in TO252 package, designed for high voltage and medium current applications. It has a drain-source breakdown voltage of 650V and a drain current capability of 5A. Using SJ_Multi-EPI technology, this MOSFET provides excellent voltage resistance and stability, suitable for applications requiring high voltage control. Its higher on-resistance makes it more suitable for applications with low switching loss requirements.
IPD65R950CFD-VB is a high voltage N-channel MOSFET in TO252 package, designed for high voltage and medium current applications. It has a drain-source breakdown voltage of 650V and a drain current capability of 5A. Using SJ_Multi-EPI technology, this MOSFET provides excellent voltage resistance and stability, suitable for applications requiring high voltage control. Its higher on-resistance makes it more suitable for applications with low switching loss requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD65R950CFD-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (Multilayer EPI technology)
- **Package type**: TO252
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI (Multilayer EPI technology)
Domain and module applications：
3. Application fields and module examples
1. **High-voltage power switch**:
The 650V drain-source breakdown voltage of IPD65R950CFD-VB makes it very suitable for high-voltage power switch applications. It can stabilize the switching circuit in a high-voltage environment, and is suitable for use in the switch control and protection circuit of high-voltage DC power supplies, providing a safe and reliable high-voltage control solution.
2. **Power converter**:
In power converters that require high-voltage DC to AC or AC to DC conversion, IPD65R950CFD-VB can be used as a switching element. Its high voltage tolerance and stable performance make it suitable for use in inverters or high-voltage converters to ensure high efficiency and stability of power conversion.
3. **High-voltage load control**:
Due to its high voltage resistance and stability, IPD65R950CFD-VB can be used in high-voltage load control applications. For example, in the switching or regulation of high-voltage loads, it can provide stable switching performance and is suitable for various industrial and power systems.
4. **Power Electronics Devices**:
IPD65R950CFD-VB is also suitable for high voltage applications in power electronic devices, such as power conditioners and power protection devices. Its high voltage withstand capability and reliability can provide effective voltage control and protection in power management systems, enhancing the overall stability and safety of the system.
1. **High-voltage power switch**:
The 650V drain-source breakdown voltage of IPD65R950CFD-VB makes it very suitable for high-voltage power switch applications. It can stabilize the switching circuit in a high-voltage environment, and is suitable for use in the switch control and protection circuit of high-voltage DC power supplies, providing a safe and reliable high-voltage control solution.
2. **Power converter**:
In power converters that require high-voltage DC to AC or AC to DC conversion, IPD65R950CFD-VB can be used as a switching element. Its high voltage tolerance and stable performance make it suitable for use in inverters or high-voltage converters to ensure high efficiency and stability of power conversion.
3. **High-voltage load control**:
Due to its high voltage resistance and stability, IPD65R950CFD-VB can be used in high-voltage load control applications. For example, in the switching or regulation of high-voltage loads, it can provide stable switching performance and is suitable for various industrial and power systems.
4. **Power Electronics Devices**:
IPD65R950CFD-VB is also suitable for high voltage applications in power electronic devices, such as power conditioners and power protection devices. Its high voltage withstand capability and reliability can provide effective voltage control and protection in power management systems, enhancing the overall stability and safety of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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