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IPD65R660CFD-VB Product details
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Product Introduction:
IPD65R660CFD-VB is a high-voltage single N-channel MOSFET in a TO252 package, designed for applications requiring high voltage and medium current. Its maximum drain-source voltage (VDS) is 700V, and it can handle gate-source voltages (VGS) up to ±30V. The MOSFET has a turn-on threshold voltage (Vth) of 3.5V, ensuring effective conduction at a lower gate voltage. IPD65R660CFD-VB uses SJ_Multi-EPI technology, which enhances its voltage resistance and can provide a stable 10A current in high-voltage applications despite an on-resistance of 600mΩ (@VGS=10V).
IPD65R660CFD-VB is a high-voltage single N-channel MOSFET in a TO252 package, designed for applications requiring high voltage and medium current. Its maximum drain-source voltage (VDS) is 700V, and it can handle gate-source voltages (VGS) up to ±30V. The MOSFET has a turn-on threshold voltage (Vth) of 3.5V, ensuring effective conduction at a lower gate voltage. IPD65R660CFD-VB uses SJ_Multi-EPI technology, which enhances its voltage resistance and can provide a stable 10A current in high-voltage applications despite an on-resistance of 600mΩ (@VGS=10V).
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 10A | 600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 600mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology type**: SJ_Multi-EPI (multi-layer EPI technology)
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 600mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology type**: SJ_Multi-EPI (multi-layer EPI technology)
Domain and module applications：
Application areas and modules:
1. **High-voltage power conversion**: The 700V drain-source voltage of the IPD65R660CFD-VB makes it ideal for high-voltage power converters, such as high-voltage DC-DC converters and AC-DC converters. It can work stably under high voltage conditions, ensuring efficient conversion and stability of the power system.
2. **Inverter applications**: In solar inverters and other high-voltage inverters, this MOSFET is able to handle DC to AC conversion at high voltage. Its high voltage withstand capability makes it excel in these applications, providing reliable high-voltage switching performance even with relatively high on-resistance.
3. **High-voltage switching and protection**: The IPD65R660CFD-VB is suitable for high-voltage switching and protection circuits, such as switch modules and overvoltage protection in power transmission systems. Its high withstand voltage characteristics and stable switching performance make it reliable in these high-voltage occasions.
4. **Power Management System**: In high-voltage power management systems, such as power distribution and load control, this MOSFET is able to provide the necessary high-voltage control and protection functions. Despite its high on-resistance, its withstand voltage characteristics make it suitable for use in complex high-voltage environments.
5. **Industrial Applications**: In industrial control systems, such as high-voltage motor drives and load switch control, the IPD65R660CFD-VB is able to handle high voltage and high current requirements, ensuring stable and efficient operation of equipment in high-power environments.
1. **High-voltage power conversion**: The 700V drain-source voltage of the IPD65R660CFD-VB makes it ideal for high-voltage power converters, such as high-voltage DC-DC converters and AC-DC converters. It can work stably under high voltage conditions, ensuring efficient conversion and stability of the power system.
2. **Inverter applications**: In solar inverters and other high-voltage inverters, this MOSFET is able to handle DC to AC conversion at high voltage. Its high voltage withstand capability makes it excel in these applications, providing reliable high-voltage switching performance even with relatively high on-resistance.
3. **High-voltage switching and protection**: The IPD65R660CFD-VB is suitable for high-voltage switching and protection circuits, such as switch modules and overvoltage protection in power transmission systems. Its high withstand voltage characteristics and stable switching performance make it reliable in these high-voltage occasions.
4. **Power Management System**: In high-voltage power management systems, such as power distribution and load control, this MOSFET is able to provide the necessary high-voltage control and protection functions. Despite its high on-resistance, its withstand voltage characteristics make it suitable for use in complex high-voltage environments.
5. **Industrial Applications**: In industrial control systems, such as high-voltage motor drives and load switch control, the IPD65R660CFD-VB is able to handle high voltage and high current requirements, ensuring stable and efficient operation of equipment in high-power environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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