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IPD65R600E6-VB Product details
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1. IPD65R600E6-VB Product Introduction
IPD65R600E6-VB is a high-voltage N-channel power MOSFET in TO252 package. This MOSFET is designed for high-voltage applications and can operate stably at a drain-source voltage (VDS) of 700V and a drain current (ID) of 10A. It uses SJ_Multi-EPI technology, which enhances its high-voltage performance and reliability. The on-resistance (RDS(ON)) of this MOSFET is 600mΩ (VGS=10V), which is suitable for medium current and high voltage switching applications. The gate threshold voltage (Vth) is 3.5V, which enables reliable switching operation under standard gate drive voltage.
IPD65R600E6-VB is a high-voltage N-channel power MOSFET in TO252 package. This MOSFET is designed for high-voltage applications and can operate stably at a drain-source voltage (VDS) of 700V and a drain current (ID) of 10A. It uses SJ_Multi-EPI technology, which enhances its high-voltage performance and reliability. The on-resistance (RDS(ON)) of this MOSFET is 600mΩ (VGS=10V), which is suitable for medium current and high voltage switching applications. The gate threshold voltage (Vth) is 3.5V, which enables reliable switching operation under standard gate drive voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 10A | 600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 10A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD65R600E6-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 600mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: SJ_Multi-EPI technology
- **Thermal resistance (Rth)**: Depends on the specific heat dissipation conditions, usually designed for effective heat dissipation requirements in high-voltage applications
- **Package type**: TO252
- **Configuration**: Single channel N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 600mΩ @ VGS=10V
- **Drain current (ID)**: 10A
- **Technology**: SJ_Multi-EPI technology
- **Thermal resistance (Rth)**: Depends on the specific heat dissipation conditions, usually designed for effective heat dissipation requirements in high-voltage applications
Domain and module applications：
III. Application Fields and Module Examples
1. **High-voltage Power Switch**
The high drain-source voltage capability of the IPD65R600E6-VB makes it suitable for high-voltage power switch applications. It can be used in devices such as high-voltage switch-mode power supplies (SMPS) and industrial power converters to help improve the efficiency and stability of power systems.
2. **Motor Drive System**
In motor drive applications that need to handle high voltages, this MOSFET can be used as a power switch for the motor. Its high voltage withstand capability and stable current handling capability can effectively improve the reliability and performance of the motor drive system.
3. **Energy Management and Inverter**
The IPD65R600E6-VB is suitable for energy management applications such as solar inverters and battery management systems. Due to its high voltage capability and low on-resistance, it can provide reliable switching and control functions in the energy conversion and management process.
4. **High-voltage electrical equipment**
In high-voltage electrical equipment, such as high-voltage relays and protection switches, the IPD65R600E6-VB can provide stable switching performance and protection functions. Its high voltage tolerance and reliability make it suitable for application scenarios that need to handle high voltage and high power.
1. **High-voltage Power Switch**
The high drain-source voltage capability of the IPD65R600E6-VB makes it suitable for high-voltage power switch applications. It can be used in devices such as high-voltage switch-mode power supplies (SMPS) and industrial power converters to help improve the efficiency and stability of power systems.
2. **Motor Drive System**
In motor drive applications that need to handle high voltages, this MOSFET can be used as a power switch for the motor. Its high voltage withstand capability and stable current handling capability can effectively improve the reliability and performance of the motor drive system.
3. **Energy Management and Inverter**
The IPD65R600E6-VB is suitable for energy management applications such as solar inverters and battery management systems. Due to its high voltage capability and low on-resistance, it can provide reliable switching and control functions in the energy conversion and management process.
4. **High-voltage electrical equipment**
In high-voltage electrical equipment, such as high-voltage relays and protection switches, the IPD65R600E6-VB can provide stable switching performance and protection functions. Its high voltage tolerance and reliability make it suitable for application scenarios that need to handle high voltage and high power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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