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IPD65R380E6-VB Product details
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Product Introduction:
IPD65R380E6-VB is a single N-channel MOSFET in TO252 package, designed for high voltage and high power applications. This MOSFET adopts advanced SJ_Multi-EPI technology and can withstand drain-source voltage (VDS) up to 700V and continuous drain current (ID) of 11A. Its gate threshold voltage (Vth) is 3.5V, enabling it to work normally at moderate gate voltage. Although its on-resistance (RDS(ON)) is 390mΩ @ VGS=10V, it provides high current carrying capacity and reliability, making it stable in high voltage environment.
IPD65R380E6-VB is a single N-channel MOSFET in TO252 package, designed for high voltage and high power applications. This MOSFET adopts advanced SJ_Multi-EPI technology and can withstand drain-source voltage (VDS) up to 700V and continuous drain current (ID) of 11A. Its gate threshold voltage (Vth) is 3.5V, enabling it to work normally at moderate gate voltage. Although its on-resistance (RDS(ON)) is 390mΩ @ VGS=10V, it provides high current carrying capacity and reliability, making it stable in high voltage environment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 11A | 390mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 390mΩ @ VGS=10V
- **Continuous drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI technology
- **Package type**: TO252
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 390mΩ @ VGS=10V
- **Continuous drain current (ID)**: 11A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
Application areas and module examples:
1. **High-voltage power converter**: The IPD65R380E6-VB is suitable for high-voltage power converters such as AC-DC converters and high-voltage DC-DC converters. Its 700V drain-source voltage capability enables it to work stably in high-voltage environments, ensuring the efficiency and reliability of the power system.
2. **Industrial power system**: In industrial power management systems, this MOSFET is able to handle high voltage and high current loads, such as in power distribution devices, motor drive systems, and industrial power modules, effectively managing and converting power to improve the overall performance and safety of the system.
3. **Inverter**: In inverter applications in renewable energy systems such as photovoltaic and wind power, the IPD65R380E6-VB is able to stably switch high voltage loads, improve the efficiency and reliability of the inverter, and support efficient energy conversion and management.
4. **High-voltage lighting equipment**: This MOSFET is suitable for high-voltage lighting equipment, such as high-voltage lamps and electric heaters. It controls high voltage current through stable switching performance, ensures the safety and stability of the equipment, and provides reliable lighting solutions.
1. **High-voltage power converter**: The IPD65R380E6-VB is suitable for high-voltage power converters such as AC-DC converters and high-voltage DC-DC converters. Its 700V drain-source voltage capability enables it to work stably in high-voltage environments, ensuring the efficiency and reliability of the power system.
2. **Industrial power system**: In industrial power management systems, this MOSFET is able to handle high voltage and high current loads, such as in power distribution devices, motor drive systems, and industrial power modules, effectively managing and converting power to improve the overall performance and safety of the system.
3. **Inverter**: In inverter applications in renewable energy systems such as photovoltaic and wind power, the IPD65R380E6-VB is able to stably switch high voltage loads, improve the efficiency and reliability of the inverter, and support efficient energy conversion and management.
4. **High-voltage lighting equipment**: This MOSFET is suitable for high-voltage lighting equipment, such as high-voltage lamps and electric heaters. It controls high voltage current through stable switching performance, ensures the safety and stability of the equipment, and provides reliable lighting solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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