中文
English
IPD65R380C6-VB Product details
Back to previous pageProduct introduction：
IPD65R380C6-VB MOSFET Product Introduction
The IPD65R380C6-VB is a high voltage N-channel MOSFET in a TO252 package. It can withstand drain-source voltages (VDS) up to 700V and supports gate-source voltages (VGS) of ±30V, making it suitable for applications in high voltage environments. This MOSFET has a gate threshold voltage of 3.5V and uses advanced SJ_Multi-EPI technology to achieve excellent high voltage characteristics. Its on-resistance (RDS(ON)) is 390mΩ at VGS = 10V, and the drain current (ID) can reach 11A. These characteristics make the IPD65R380C6-VB perform well in application scenarios that require high voltage, high power and high reliability.
The IPD65R380C6-VB is a high voltage N-channel MOSFET in a TO252 package. It can withstand drain-source voltages (VDS) up to 700V and supports gate-source voltages (VGS) of ±30V, making it suitable for applications in high voltage environments. This MOSFET has a gate threshold voltage of 3.5V and uses advanced SJ_Multi-EPI technology to achieve excellent high voltage characteristics. Its on-resistance (RDS(ON)) is 390mΩ at VGS = 10V, and the drain current (ID) can reach 11A. These characteristics make the IPD65R380C6-VB perform well in application scenarios that require high voltage, high power and high reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 11A | 390mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
IPD65R380C6-VB Detailed parameter description
1. **Package type**: TO252
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 700V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 390mΩ @ VGS = 10V
7. **Drain current (ID)**: 11A
8. **Technology type**: SJ_Multi-EPI
9. **Operating temperature range**: -55°C to 175°C
10. **Power dissipation (Ptot)**: Typically 70W
11. **Maximum pulse current (ID, pulse)**: up to 40A
12. **Input capacitance (Ciss)**: about 3500pF
13. **Reverse recovery time (Trr)**: typical value is about 80ns
14. **Gate charge (Qg)**: typical value is 150nC
1. **Package type**: TO252
2. **Polarity**: N-channel
3. **Drain-source voltage (VDS)**: 700V
4. **Gate-source voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 390mΩ @ VGS = 10V
7. **Drain current (ID)**: 11A
8. **Technology type**: SJ_Multi-EPI
9. **Operating temperature range**: -55°C to 175°C
10. **Power dissipation (Ptot)**: Typically 70W
11. **Maximum pulse current (ID, pulse)**: up to 40A
12. **Input capacitance (Ciss)**: about 3500pF
13. **Reverse recovery time (Trr)**: typical value is about 80ns
14. **Gate charge (Qg)**: typical value is 150nC
Domain and module applications：
Applications and Module Examples
1. **High-voltage Switching Power Supply (SMPS)**:
The IPD65R380C6-VB is suitable for high-voltage switching power supplies (SMPS) such as high-voltage DC-DC converters and AC-DC converters. Its voltage tolerance up to 700V and low on-resistance enable it to provide efficient power conversion and stable performance in high-power environments.
2. **Industrial Power Management**:
In industrial power management systems, this MOSFET can be used in high-voltage power control modules such as power distribution and protection systems. Its high voltage and high current handling capabilities can meet the stringent power requirements in industrial equipment, ensuring system reliability and durability.
3. **Electric Vehicles (EV)**:
In electric vehicle systems, the IPD65R380C6-VB can be used in battery management systems (BMS) and motor control modules. Its high voltage tolerance and stable performance are critical to the high-voltage battery and drive system of electric vehicles, helping to ensure safe and efficient operation of the vehicle.
4. **High-voltage lighting system**:
This MOSFET is also suitable for switching and dimming control of high-voltage lighting systems, such as for the control of high-voltage lamps and fluorescent lamps. Its high voltage capability and low on-resistance ensure the reliability and efficiency of the lighting system, and is suitable for a variety of high-power lighting applications.
IPD65R380C6-VB is a MOSFET that performs well in high-voltage and high-power applications, providing a stable and efficient solution for a variety of applications that require high voltage and high power handling.
1. **High-voltage Switching Power Supply (SMPS)**:
The IPD65R380C6-VB is suitable for high-voltage switching power supplies (SMPS) such as high-voltage DC-DC converters and AC-DC converters. Its voltage tolerance up to 700V and low on-resistance enable it to provide efficient power conversion and stable performance in high-power environments.
2. **Industrial Power Management**:
In industrial power management systems, this MOSFET can be used in high-voltage power control modules such as power distribution and protection systems. Its high voltage and high current handling capabilities can meet the stringent power requirements in industrial equipment, ensuring system reliability and durability.
3. **Electric Vehicles (EV)**:
In electric vehicle systems, the IPD65R380C6-VB can be used in battery management systems (BMS) and motor control modules. Its high voltage tolerance and stable performance are critical to the high-voltage battery and drive system of electric vehicles, helping to ensure safe and efficient operation of the vehicle.
4. **High-voltage lighting system**:
This MOSFET is also suitable for switching and dimming control of high-voltage lighting systems, such as for the control of high-voltage lamps and fluorescent lamps. Its high voltage capability and low on-resistance ensure the reliability and efficiency of the lighting system, and is suitable for a variety of high-power lighting applications.
IPD65R380C6-VB is a MOSFET that performs well in high-voltage and high-power applications, providing a stable and efficient solution for a variety of applications that require high voltage and high power handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
