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IPD65R1K4CFD-VB Product details
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IPD65R1K4CFD-VB MOSFET Product Introduction
IPD65R1K4CFD-VB is a high voltage N-channel MOSFET with TO252 package type, designed for high voltage applications. It supports drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V, and adopts SJ_Multi-EPI technology. Although its on-resistance is 1000mΩ, which makes it provide higher power loss in some high voltage applications, it performs well in occasions requiring high voltage withstand capability and is an ideal choice for handling high voltage switching operations.
IPD65R1K4CFD-VB is a high voltage N-channel MOSFET with TO252 package type, designed for high voltage applications. It supports drain-source voltage (VDS) up to 650V and gate-source voltage (VGS) of ±30V, and adopts SJ_Multi-EPI technology. Although its on-resistance is 1000mΩ, which makes it provide higher power loss in some high voltage applications, it performs well in occasions requiring high voltage withstand capability and is an ideal choice for handling high voltage switching operations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **High-voltage power management**: The IPD65R1K4CFD-VB is suitable for power management systems that need to handle high voltages, such as power converters and high-voltage power switches. Despite its high on-resistance, its 650V withstand voltage makes it stable in these high-voltage applications, ensuring the safety and reliability of the system.
2. **Power inverter**: In solar inverters and other high-voltage power inverters, this MOSFET is able to handle high voltage and high power requirements. Although its on-resistance is high, its high voltage withstand characteristics make it suitable for use in high-voltage inverter applications.
3. **Power switching equipment**: This MOSFET can be used in power switching equipment, such as high-voltage circuit breakers and power switches. Its design can withstand high-voltage switching operations, ensuring the stability and long life of the equipment in high-voltage environments.
4. **Industrial Control Systems**: In industrial control systems that require high voltage tolerance, such as high-power motor drives and heater controls, the IPD65R1K4CFD-VB provides reliable switching performance. Despite its high on-resistance, its high voltage withstand capability enables it to handle high voltage applications in industrial environments.
The high voltage tolerance and relatively high on-resistance of the IPD65R1K4CFD-VB make it an excellent performer in high voltage and high power applications, suitable for power management, power switches, inverters, and industrial control systems that require high voltage switching and stability.
1. **High-voltage power management**: The IPD65R1K4CFD-VB is suitable for power management systems that need to handle high voltages, such as power converters and high-voltage power switches. Despite its high on-resistance, its 650V withstand voltage makes it stable in these high-voltage applications, ensuring the safety and reliability of the system.
2. **Power inverter**: In solar inverters and other high-voltage power inverters, this MOSFET is able to handle high voltage and high power requirements. Although its on-resistance is high, its high voltage withstand characteristics make it suitable for use in high-voltage inverter applications.
3. **Power switching equipment**: This MOSFET can be used in power switching equipment, such as high-voltage circuit breakers and power switches. Its design can withstand high-voltage switching operations, ensuring the stability and long life of the equipment in high-voltage environments.
4. **Industrial Control Systems**: In industrial control systems that require high voltage tolerance, such as high-power motor drives and heater controls, the IPD65R1K4CFD-VB provides reliable switching performance. Despite its high on-resistance, its high voltage withstand capability enables it to handle high voltage applications in industrial environments.
The high voltage tolerance and relatively high on-resistance of the IPD65R1K4CFD-VB make it an excellent performer in high voltage and high power applications, suitable for power management, power switches, inverters, and industrial control systems that require high voltage switching and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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