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IPD64CN10N G-VB Product details
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1. IPD64CN10N G-VB Product Introduction
IPD64CN10N G-VB is a high-performance single N-channel MOSFET in TO252 package. Designed for efficient power management and switching applications, this MOSFET has a maximum drain-source voltage of 100V and a high current carrying capacity of 40A. Its gate-source voltage range is ±20V, the gate threshold voltage is 1.8V, and the on-resistance is as low as 30mΩ (at VGS=10V). Using Trench technology, this MOSFET provides excellent conductivity and low power consumption, and is very suitable for applications requiring high switching speed and high efficiency.
IPD64CN10N G-VB is a high-performance single N-channel MOSFET in TO252 package. Designed for efficient power management and switching applications, this MOSFET has a maximum drain-source voltage of 100V and a high current carrying capacity of 40A. Its gate-source voltage range is ±20V, the gate threshold voltage is 1.8V, and the on-resistance is as low as 30mΩ (at VGS=10V). Using Trench technology, this MOSFET provides excellent conductivity and low power consumption, and is very suitable for applications requiring high switching speed and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD64CN10N G-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ@VGS=4.5V
- 30mΩ@VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: Trench
- **Other features**: Low on-resistance, fast switching capability, low gate charge, suitable for high frequency and high power applications.
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ@VGS=4.5V
- 30mΩ@VGS=10V
- **Drain current (ID)**: 40A
- **Technology**: Trench
- **Other features**: Low on-resistance, fast switching capability, low gate charge, suitable for high frequency and high power applications.
Domain and module applications：
III. Application fields and module examples of IPD64CN10N G-VB
1. **Power management module**: Due to the low on-resistance and high current capability of IPD64CN10N G-VB, it is very suitable for DC-DC converters and power management systems. These characteristics can significantly improve the efficiency of the power supply, reduce energy loss, and provide stable power conversion.
2. **Electric vehicle driver**: The fast switching characteristics and high current carrying capacity of this MOSFET make it an ideal choice for electric vehicle motor drive systems. It can effectively control high current loads in the motor and improve the performance and efficiency of the drive system.
3. **High-power LED driver**: In high-power LED lighting systems, IPD64CN10N G-VB can be used as an efficient switch and dimming controller. Its low on-resistance and high efficiency help control the power output and brightness of the LED while maintaining low power consumption.
4. **Industrial control equipment**: In industrial automation equipment, this MOSFET can be used for power switching and load control. Its high current capability and low power consumption make it suitable for power management in various industrial applications to ensure stable operation of equipment.
The applications in these fields give full play to the high efficiency and high switching speed of IPD64CN10N G-VB, making it perform well in various high-power and high-efficiency occasions.
1. **Power management module**: Due to the low on-resistance and high current capability of IPD64CN10N G-VB, it is very suitable for DC-DC converters and power management systems. These characteristics can significantly improve the efficiency of the power supply, reduce energy loss, and provide stable power conversion.
2. **Electric vehicle driver**: The fast switching characteristics and high current carrying capacity of this MOSFET make it an ideal choice for electric vehicle motor drive systems. It can effectively control high current loads in the motor and improve the performance and efficiency of the drive system.
3. **High-power LED driver**: In high-power LED lighting systems, IPD64CN10N G-VB can be used as an efficient switch and dimming controller. Its low on-resistance and high efficiency help control the power output and brightness of the LED while maintaining low power consumption.
4. **Industrial control equipment**: In industrial automation equipment, this MOSFET can be used for power switching and load control. Its high current capability and low power consumption make it suitable for power management in various industrial applications to ensure stable operation of equipment.
The applications in these fields give full play to the high efficiency and high switching speed of IPD64CN10N G-VB, making it perform well in various high-power and high-efficiency occasions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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