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IPD640N06L G-VB Product details
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1. IPD640N06L G-VB Product Introduction
IPD640N06L G-VB is a high-performance unipolar N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its 30V drain-source breakdown voltage and 80A drain current capability make it excellent in applications requiring high current and low voltage control. Using Trench technology, this MOSFET has extremely low on-resistance and can provide efficient switching performance under high frequency and high load conditions, ensuring efficient operation of the system.
IPD640N06L G-VB is a high-performance unipolar N-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its 30V drain-source breakdown voltage and 80A drain current capability make it excellent in applications requiring high current and low voltage control. Using Trench technology, this MOSFET has extremely low on-resistance and can provide efficient switching performance under high frequency and high load conditions, ensuring efficient operation of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. IPD640N06L G-VB Detailed parameter description
- **Package type**: TO252
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 30V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench (trench technology)
- **Package type**: TO252
- **Channel configuration**: Unipolar N-channel
- **Drain-source breakdown voltage (VDS)**: 30V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 80A
- **Technology**: Trench (trench technology)
Domain and module applications：
III. Application fields and module examples
1. **Power management**:
The low on-resistance and high current capability of IPD640N06L G-VB make it very suitable for efficient power management systems. It can be used in DC-DC converters and power switches. In application scenarios that require high efficiency and high-frequency switching, it can effectively reduce energy loss and improve the overall efficiency of the system.
2. **Electric vehicle drive**:
In electric vehicle applications, IPD640N06L G-VB can be used in motor drive systems. Its high current carrying capacity and low on-resistance enable it to provide reliable switching performance in motor control, support the efficient operation of electric vehicle motors, and enhance the power performance and endurance of the vehicle.
3. **Load switch**:
Due to its high current capability and low on-resistance, IPD640N06L G-VB is suitable for various load switch applications, such as battery switching and load switching. It can work stably under high current load conditions, ensuring the reliability and low power consumption of load switch operation.
4. **Motor Control**:
In motor drive systems that require precise current control and fast switching, the IPD640N06L G-VB can provide excellent performance. Its low on-resistance can reduce heat generation and is suitable for high-performance motor drive modules to achieve efficient motor control and operation.
1. **Power management**:
The low on-resistance and high current capability of IPD640N06L G-VB make it very suitable for efficient power management systems. It can be used in DC-DC converters and power switches. In application scenarios that require high efficiency and high-frequency switching, it can effectively reduce energy loss and improve the overall efficiency of the system.
2. **Electric vehicle drive**:
In electric vehicle applications, IPD640N06L G-VB can be used in motor drive systems. Its high current carrying capacity and low on-resistance enable it to provide reliable switching performance in motor control, support the efficient operation of electric vehicle motors, and enhance the power performance and endurance of the vehicle.
3. **Load switch**:
Due to its high current capability and low on-resistance, IPD640N06L G-VB is suitable for various load switch applications, such as battery switching and load switching. It can work stably under high current load conditions, ensuring the reliability and low power consumption of load switch operation.
4. **Motor Control**:
In motor drive systems that require precise current control and fast switching, the IPD640N06L G-VB can provide excellent performance. Its low on-resistance can reduce heat generation and is suitable for high-performance motor drive modules to achieve efficient motor control and operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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